A2T18S262W12NR3 NXP USA Inc.
Hersteller: NXP USA Inc.
Description: RF MOSFET LDMOS 28V OM880X-2L2L
Packaging: Tape & Reel (TR)
Package / Case: OM-880X-2L2L
Current Rating (Amps): 10µA
Mounting Type: Chassis Mount
Frequency: 1.805GHz ~ 1.88GHz
Power - Output: 231W
Gain: 19.3dB
Technology: LDMOS
Supplier Device Package: OM-880X-2L2L
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 1.6 A
Description: RF MOSFET LDMOS 28V OM880X-2L2L
Packaging: Tape & Reel (TR)
Package / Case: OM-880X-2L2L
Current Rating (Amps): 10µA
Mounting Type: Chassis Mount
Frequency: 1.805GHz ~ 1.88GHz
Power - Output: 231W
Gain: 19.3dB
Technology: LDMOS
Supplier Device Package: OM-880X-2L2L
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 1.6 A
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Technische Details A2T18S262W12NR3 NXP USA Inc.
Description: RF MOSFET LDMOS 28V OM880X-2L2L, Packaging: Tape & Reel (TR), Package / Case: OM-880X-2L2L, Current Rating (Amps): 10µA, Mounting Type: Chassis Mount, Frequency: 1.805GHz ~ 1.88GHz, Power - Output: 231W, Gain: 19.3dB, Technology: LDMOS, Supplier Device Package: OM-880X-2L2L, Voltage - Rated: 65 V, Voltage - Test: 28 V, Current - Test: 1.6 A.
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Preis ohne MwSt |
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A2T18S262W12NR3 | Hersteller : NXP Semiconductors | RF MOSFET Transistors Airfast RF Power LDM OS Transistor 1805- |
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