A2T18S160W31GSR3 NXP USA Inc.
Hersteller: NXP USA Inc.
Description: RF MOSFET LDMOS 28V NI780
Packaging: Tape & Reel (TR)
Package / Case: NI-780GS-2L2LA
Mounting Type: Chassis Mount
Frequency: 1.88GHz
Power - Output: 32W
Gain: 19.9dB
Technology: LDMOS
Supplier Device Package: NI-780GS-2L2LA
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 1 A
Description: RF MOSFET LDMOS 28V NI780
Packaging: Tape & Reel (TR)
Package / Case: NI-780GS-2L2LA
Mounting Type: Chassis Mount
Frequency: 1.88GHz
Power - Output: 32W
Gain: 19.9dB
Technology: LDMOS
Supplier Device Package: NI-780GS-2L2LA
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 1 A
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details A2T18S160W31GSR3 NXP USA Inc.
Description: RF MOSFET LDMOS 28V NI780, Packaging: Tape & Reel (TR), Package / Case: NI-780GS-2L2LA, Mounting Type: Chassis Mount, Frequency: 1.88GHz, Power - Output: 32W, Gain: 19.9dB, Technology: LDMOS, Supplier Device Package: NI-780GS-2L2LA, Voltage - Rated: 65 V, Voltage - Test: 28 V, Current - Test: 1 A.
Weitere Produktangebote A2T18S160W31GSR3
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
A2T18S160W31GSR3 | Hersteller : NXP / Freescale | RF MOSFET Transistors Airfast RF Power LDMOS Transistor 1805-1995 MHz, 32 W Avg., 28 V |
Produkt ist nicht verfügbar |