![8.0SMDJ30CA-T7 8.0SMDJ30CA-T7](https://ce8dc832c.cloudimg.io/v7/_cdn_/94/55/E0/00/0/939337_1.jpg?width=640&height=480&wat=1&wat_url=_tme-wrk_%2Ftme_new_render3d.png&wat_scale=100p&ci_sign=7350a93635f6239d265e2bbba42cb75d7a5121cb)
8.0SMDJ30CA-T7 LITTELFUSE
![8.0SMDJ_ser.pdf](/images/adobe-acrobat.png)
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 8kW; 33.3÷36.8V; 165.3A; bidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 8kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 165.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details 8.0SMDJ30CA-T7 LITTELFUSE
Category: Bidirectional SMD transil diodes, Description: Diode: TVS; 8kW; 33.3÷36.8V; 165.3A; bidirectional; ±5%; DO214AB, Type of diode: TVS, Peak pulse power dissipation: 8kW, Max. off-state voltage: 30V, Breakdown voltage: 33.3...36.8V, Max. forward impulse current: 165.3A, Semiconductor structure: bidirectional, Tolerance: ±5%, Case: DO214AB, Mounting: SMD, Leakage current: 5µA, Kind of package: reel; tape, Features of semiconductor devices: glass passivated, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote 8.0SMDJ30CA-T7
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
![]() |
8.0SMDJ30CA-T7 | Hersteller : Littelfuse Inc. |
![]() |
Produkt ist nicht verfügbar |
|
![]() |
8.0SMDJ30CA-T7 | Hersteller : Littelfuse Inc. |
![]() |
Produkt ist nicht verfügbar |
|
![]() |
8.0SMDJ30CA-T7 | Hersteller : Littelfuse |
![]() |
Produkt ist nicht verfügbar |
|
![]() |
8.0SMDJ30CA-T7 | Hersteller : LITTELFUSE |
![]() Description: Diode: TVS; 8kW; 33.3÷36.8V; 165.3A; bidirectional; ±5%; DO214AB Type of diode: TVS Peak pulse power dissipation: 8kW Max. off-state voltage: 30V Breakdown voltage: 33.3...36.8V Max. forward impulse current: 165.3A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |