auf Bestellung 660 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 0.99 EUR |
| 10+ | 0.84 EUR |
| 100+ | 0.59 EUR |
| 600+ | 0.45 EUR |
| 1000+ | 0.36 EUR |
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Technische Details 6A10B-G Comchip Technology
Description: DIODE GEN PURP 1KV 6A R-6, Packaging: Bulk, Package / Case: R-6, Axial, Mounting Type: Through Hole, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Capacitance @ Vr, F: 100pF @ 4V, 1MHz, Current - Average Rectified (Io): 6A, Supplier Device Package: R-6, Operating Temperature - Junction: -55°C ~ 125°C, Voltage - DC Reverse (Vr) (Max): 1000 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A, Current - Reverse Leakage @ Vr: 10 µA @ 1000 V.
Weitere Produktangebote 6A10B-G
| Foto | Bezeichnung | Hersteller | Beschreibung |
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6A10B-G | Hersteller : Comchip Technology |
 Diode 1KV 6A 2-Pin Case R-6 Box |
Produkt ist nicht verfügbar |
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6A10B-G | Hersteller : Comchip Technology |
Description: DIODE GEN PURP 1KV 6A R-6 Packaging: Bulk Package / Case: R-6, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 100pF @ 4V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: R-6 Operating Temperature - Junction: -55°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
Produkt ist nicht verfügbar |