6A100G Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 6A R-6
Packaging: Tape & Reel (TR)
Package / Case: R-6, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: R-6
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: DIODE GEN PURP 1KV 6A R-6
Packaging: Tape & Reel (TR)
Package / Case: R-6, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: R-6
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
1000+ | 0.46 EUR |
2000+ | 0.35 EUR |
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Technische Details 6A100G Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 6A R-6, Packaging: Tape & Reel (TR), Package / Case: R-6, Axial, Mounting Type: Through Hole, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Capacitance @ Vr, F: 60pF @ 4V, 1MHz, Current - Average Rectified (Io): 6A, Supplier Device Package: R-6, Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 1000 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A, Current - Reverse Leakage @ Vr: 10 µA @ 1000 V.
Weitere Produktangebote 6A100G nach Preis ab 0.51 EUR bis 1.62 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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6A100G | Hersteller : Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 1KV 6A R-6 Packaging: Cut Tape (CT) Package / Case: R-6, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 60pF @ 4V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: R-6 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
auf Bestellung 2741 Stücke: Lieferzeit 10-14 Tag (e) |
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6A100G | Hersteller : Taiwan Semiconductor | Rectifier Diode Switching Si 1KV 6A 2-Pin Case R-6 |
Produkt ist nicht verfügbar |
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6A100G | Hersteller : Taiwan Semiconductor | Diode Switching 1KV 6A 2-Pin Case R-6 T/R |
Produkt ist nicht verfügbar |
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6A100G | Hersteller : TAIWAN SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 6A; R6 Case: R6 Max. off-state voltage: 1kV Load current: 6A Semiconductor structure: single diode Type of diode: rectifying Mounting: THT Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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6A100G | Hersteller : Taiwan Semiconductor | Rectifiers 6A, 1000V, Standard Recovery Rectifier |
Produkt ist nicht verfügbar |
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6A100G | Hersteller : TAIWAN SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 6A; R6 Case: R6 Max. off-state voltage: 1kV Load current: 6A Semiconductor structure: single diode Type of diode: rectifying Mounting: THT |
Produkt ist nicht verfügbar |