![5KP190CA-B 5KP190CA-B](https://ce8dc832c.cloudimg.io/v7/_cdn_/98/AE/00/00/0/60041_1.jpg?width=640&height=480&wat=1&wat_url=_tme-wrk_%2Ftme_new.png&wat_scale=100p&ci_sign=b87f8d2541cbd9967d1ba5a7dd3bb5d738eb91eb)
5KP190CA-B LITTELFUSE
![5KP-ser.pdf](/images/adobe-acrobat.png)
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 222V; 16.5A; bidirectional; ±5%; P600; 5kW; bulk
Mounting: THT
Kind of package: bulk
Type of diode: TVS
Features of semiconductor devices: glass passivated
Peak pulse power dissipation: 5kW
Case: P600
Tolerance: ±5%
Max. off-state voltage: 190V
Semiconductor structure: bidirectional
Max. forward impulse current: 16.5A
Breakdown voltage: 222V
Leakage current: 2µA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details 5KP190CA-B LITTELFUSE
Category: Bidirectional THT transil diodes, Description: Diode: TVS; 222V; 16.5A; bidirectional; ±5%; P600; 5kW; bulk, Mounting: THT, Kind of package: bulk, Type of diode: TVS, Features of semiconductor devices: glass passivated, Peak pulse power dissipation: 5kW, Case: P600, Tolerance: ±5%, Max. off-state voltage: 190V, Semiconductor structure: bidirectional, Max. forward impulse current: 16.5A, Breakdown voltage: 222V, Leakage current: 2µA, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote 5KP190CA-B
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
5KP190CA-B | Hersteller : Littelfuse Inc. | Description: TVS DIODE 190V 310V P600 |
Produkt ist nicht verfügbar |
||
![]() |
5KP190CA-B | Hersteller : Littelfuse |
![]() |
Produkt ist nicht verfügbar |
|
![]() |
5KP190CA/B | Hersteller : Yageo |
![]() |
Produkt ist nicht verfügbar |
|
![]() |
5KP190CA-B | Hersteller : LITTELFUSE |
![]() Description: Diode: TVS; 222V; 16.5A; bidirectional; ±5%; P600; 5kW; bulk Mounting: THT Kind of package: bulk Type of diode: TVS Features of semiconductor devices: glass passivated Peak pulse power dissipation: 5kW Case: P600 Tolerance: ±5% Max. off-state voltage: 190V Semiconductor structure: bidirectional Max. forward impulse current: 16.5A Breakdown voltage: 222V Leakage current: 2µA |
Produkt ist nicht verfügbar |