5KP15CA-B LITTELFUSE
Hersteller: LITTELFUSE
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 17.6V; 209A; bidirectional; ±5%; P600; 5kW; bulk
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 15V
Breakdown voltage: 17.6V
Max. forward impulse current: 209A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Kind of package: bulk
Features of semiconductor devices: glass passivated
Anzahl je Verpackung: 1 Stücke
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 17.6V; 209A; bidirectional; ±5%; P600; 5kW; bulk
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 15V
Breakdown voltage: 17.6V
Max. forward impulse current: 209A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: P600
Mounting: THT
Leakage current: 2µA
Kind of package: bulk
Features of semiconductor devices: glass passivated
Anzahl je Verpackung: 1 Stücke
auf Bestellung 63 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
26+ | 2.77 EUR |
29+ | 2.49 EUR |
36+ | 2.03 EUR |
38+ | 1.92 EUR |
100+ | 1.84 EUR |
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Technische Details 5KP15CA-B LITTELFUSE
Category: Bidirectional THT transil diodes, Description: Diode: TVS; 17.6V; 209A; bidirectional; ±5%; P600; 5kW; bulk, Type of diode: TVS, Peak pulse power dissipation: 5kW, Max. off-state voltage: 15V, Breakdown voltage: 17.6V, Max. forward impulse current: 209A, Semiconductor structure: bidirectional, Tolerance: ±5%, Case: P600, Mounting: THT, Leakage current: 2µA, Kind of package: bulk, Features of semiconductor devices: glass passivated, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote 5KP15CA-B nach Preis ab 1.92 EUR bis 2.77 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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5KP15CA-B | Hersteller : LITTELFUSE |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 17.6V; 209A; bidirectional; ±5%; P600; 5kW; bulk Type of diode: TVS Peak pulse power dissipation: 5kW Max. off-state voltage: 15V Breakdown voltage: 17.6V Max. forward impulse current: 209A Semiconductor structure: bidirectional Tolerance: ±5% Case: P600 Mounting: THT Leakage current: 2µA Kind of package: bulk Features of semiconductor devices: glass passivated |
auf Bestellung 63 Stücke: Lieferzeit 14-21 Tag (e) |
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