Suchergebnisse für "3770/16" : 25

Art der Ansicht :
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
ohne MwSt
3770-16 (100 FT) 3770-16 (100 FT) 3M 3770.pdf 3M Cable and Accessories.pdf 3M_Cable_SelectionGuide_Letter_HR.pdf Category: Ribbon Cables - Single Color
Description: Wire: ribbon; 1.27mm; stranded; Cu; unshielded; grey; 30.5m
Type of wire: ribbon
Ribbon cable pitch: 1.27mm
Core structure: stranded
Kind of core: Cu; tinned
Number of cores: 16
Core diameter: 26AWG
Shield structure: unshielded
Wire insulation material: elastomer thermoplastic TPE
Insulation colour: grey
Operating temperature: -40...105°C
Rated voltage: 50V
A dimension: 20.32mm
B dimension: 19.05mm
Package contents: 30.5m
Conform to the norm: UL 20297
Cable structure: 16x26AWG
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
1+117.5 EUR
3770-16 (100 FT) 3770-16 (100 FT) 3M 3770.pdf 3M Cable and Accessories.pdf 3M_Cable_SelectionGuide_Letter_HR.pdf Category: Ribbon Cables - Single Color
Description: Wire: ribbon; 1.27mm; stranded; Cu; unshielded; grey; 30.5m
Type of wire: ribbon
Ribbon cable pitch: 1.27mm
Core structure: stranded
Kind of core: Cu; tinned
Number of cores: 16
Core diameter: 26AWG
Shield structure: unshielded
Wire insulation material: elastomer thermoplastic TPE
Insulation colour: grey
Operating temperature: -40...105°C
Rated voltage: 50V
A dimension: 20.32mm
B dimension: 19.05mm
Package contents: 30.5m
Conform to the norm: UL 20297
Cable structure: 16x26AWG
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2 Stücke:
Lieferzeit 7-14 Tag (e)
1+117.5 EUR
3770/16 100 3770/16 100 3M 3mtm-round-conductor-flat-cable-3770-series-ts0342.pdf Description: CABLE RIBBON 16COND 0.05 GRAY
Packaging: Spool
Features: Zippable
Length: 100.0' (30.48m)
Wire Gauge: 26 AWG
Shielding: Unshielded
Jacket (Insulation) Material: Thermoplastic Elastomer (TPE)
Conductor Strand: 7 Strands / 34 AWG
Pitch: 0.050" (1.27mm)
Operating Temperature: -40°C ~ 105°C
Number of Conductors: 16
Cable Type: Flat Cable
Ratings: UL Style 20297
Jacket Color: Gray
Ribbon Thickness: 0.039" (0.99mm)
Ribbon Width: 0.800" (20.32mm)
Part Status: Active
Voltage: 300 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
100+2.7 EUR
300+ 2.38 EUR
500+ 2.16 EUR
1000+ 1.95 EUR
Mindestbestellmenge: 100
3770/16 100 3770/16 100 3M 3mtm-round-conductor-flat-cable-3770-series-ts0342.pdf Description: CBL RIBN 16COND 0.05 GRAY FOOT
Features: Zippable
Packaging: Digi-Spool®, Continuous Spool
Length: Enter Number of Feet in Order Quantity
Wire Gauge: 26 AWG
Shielding: Unshielded
Jacket (Insulation) Material: Thermoplastic Elastomer (TPE)
Conductor Strand: 7 Strands / 34 AWG
Pitch: 0.050" (1.27mm)
Operating Temperature: -40°C ~ 105°C
Number of Conductors: 16
Cable Type: Flat Cable
Ratings: UL Style 20297
Jacket Color: Gray
Ribbon Thickness: 0.039" (0.99mm)
Ribbon Width: 0.800" (20.32mm)
Voltage: 300 V
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.19 EUR
5+ 4.13 EUR
10+ 3.75 EUR
25+ 3.3 EUR
50+ 2.99 EUR
100+ 2.7 EUR
Mindestbestellmenge: 4
3770/16-100 3770/16-100 3M Electronic Solutions Division ts0342-3441.pdf Flat Cables .050" 16C TPE ROUND
auf Bestellung 9 Stücke:
Lieferzeit 52-56 Tag (e)
1+196.8 EUR
10+ 172.18 EUR
20+ 170.58 EUR
50+ 163.36 EUR
10320-3210-000 10320-3210-000 3M Electronic Solutions Division 7ebd0a2d75118ba0a754ef182c845c7535dba059-2952285.pdf description D-Sub Backshells 20P JUNCTION SHELL IDC WIREMOUNT SHIELD
auf Bestellung 389 Stücke:
Lieferzeit 10-14 Tag (e)
1+9.05 EUR
10+ 7.64 EUR
IPD50P03P4L11ATMA2 IPD50P03P4L11ATMA2 Infineon Technologies Infineon-IPD50P03P4L-11-DataSheet-v01_02-EN.pdf?fileId=db3a30431ddc9372011e07ebbe0127e8 Description: MOSFET P-CH 30V 50A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 50A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2V @ 85µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 19692 Stücke:
Lieferzeit 10-14 Tag (e)
9+1.99 EUR
11+ 1.63 EUR
100+ 1.27 EUR
500+ 1.07 EUR
1000+ 0.87 EUR
Mindestbestellmenge: 9
IPD50P03P4L11ATMA2 IPD50P03P4L11ATMA2 Infineon Technologies Infineon-IPD50P03P4L-11-DataSheet-v01_02-EN.pdf?fileId=db3a30431ddc9372011e07ebbe0127e8 Description: MOSFET P-CH 30V 50A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 50A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2V @ 85µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.82 EUR
5000+ 0.78 EUR
12500+ 0.75 EUR
Mindestbestellmenge: 2500
IPP45P03P4L11AKSA1 IPP45P03P4L11AKSA1 Infineon Technologies IPx45P03P4L-11.pdf Description: MOSFET P-CH 30V 45A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 45A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2V @ 85µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V
auf Bestellung 3538 Stücke:
Lieferzeit 10-14 Tag (e)
485+1.02 EUR
Mindestbestellmenge: 485
3770/16-100 3770/16-100 3M Interconnect Solutions 377009.pdf Flat Cable Thermoplastic Elastomer 16Conductors 26AWG 300V Gray/Blue Edge Roll
Produkt ist nicht verfügbar
39537-7016 39537-7016 Molex Pluggable Terminal Blocks 5.08MM EURO PLUG VER ERT ME RWE GRN 16CKT
Produkt ist nicht verfügbar
22-28-9200 22-28-9200 Molex Headers & Wire Housings KK 100 Hdr Assy RA 20 Ckt Tin
Produkt ist nicht verfügbar
22-28-9240 22-28-9240 Molex Headers & Wire Housings KK 100 Hdr Assy RA B y RA Bkwy 24 Ckt Tin
Produkt ist nicht verfügbar
7000057318 3M 010b6033efa4133f996225db86c60dac36f3a8fb-2952220.pdf Flat Cables 3M Round Conductor Flat Cable, 3770 Series, 3770/16, 100 ft
Produkt ist nicht verfügbar
IPB45P03P4L11ATMA1 IPB45P03P4L11ATMA1 Infineon Technologies Infineon-I45P03P4L_11-DS-v01_00-en.pdf?fileId=db3a30431ddc9372011e07ee39732802 Description: MOSFET P-CH 30V 45A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 45A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2V @ 85µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
IPB45P03P4L11ATMA2 Infineon Technologies Infineon-I45P03P4L_11-DS-v01_00-en.pdf?fileId=db3a30431ddc9372011e07ee39732802 Description: MOSFET_(20V 40V) PG-TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 45A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2V @ 85µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
IPD50P03P4L11ATMA1 IPD50P03P4L11ATMA1 Infineon Technologies Infineon-IPD50P03P4L_11-DS-v01_01-en.pdf?folderId=db3a304314dca3890114ef902baa05f9&fileId=db3a30431ddc9372011e07ebbe0127e8&ack=t Description: MOSFET P-CH 30V 50A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 50A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2V @ 85µA
Supplier Device Package: PG-TO252-3-11
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V
Produkt ist nicht verfügbar
IPD50P03P4L11ATMA1 IPD50P03P4L11ATMA1 Infineon Technologies Infineon-IPD50P03P4L_11-DS-v01_01-en.pdf?folderId=db3a304314dca3890114ef902baa05f9&fileId=db3a30431ddc9372011e07ebbe0127e8&ack=t Description: MOSFET P-CH 30V 50A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 50A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2V @ 85µA
Supplier Device Package: PG-TO252-3-11
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V
Produkt ist nicht verfügbar
IPI45P03P4L11AKSA1 IPI45P03P4L11AKSA1 Infineon Technologies IPx45P03P4L-11.pdf Description: MOSFET P-CH 30V 45A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 45A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2V @ 85µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V
Produkt ist nicht verfügbar
IPP45P03P4L11AKSA1 IPP45P03P4L11AKSA1 Infineon Technologies IPx45P03P4L-11.pdf Description: MOSFET P-CH 30V 45A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 45A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2V @ 85µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V
Produkt ist nicht verfügbar
KJ7T20N16SAL27 ITT Cannon MILDTL_38999_fullcatalog-1550610.pdf Circular MIL Spec Connector
Produkt ist nicht verfügbar
SI4654DY-T1-E3 SI4654DY-T1-E3 Vishay Siliconix si4654dy.pdf Description: MOSFET N-CH 25V 28.6A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28.6A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 15A, 10V
Power Dissipation (Max): 2.5W (Ta), 5.9W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 15 V
Produkt ist nicht verfügbar
SI4654DY-T1-GE3 SI4654DY-T1-GE3 Vishay Siliconix si4654dy.pdf Description: MOSFET N-CH 25V 28.6A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28.6A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 15A, 10V
Power Dissipation (Max): 2.5W (Ta), 5.9W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 15 V
Produkt ist nicht verfügbar
SI4654DY-T1-GE3 SI4654DY-T1-GE3 Vishay Siliconix si4654dy.pdf Description: MOSFET N-CH 25V 28.6A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28.6A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 15A, 10V
Power Dissipation (Max): 2.5W (Ta), 5.9W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 15 V
Produkt ist nicht verfügbar
3770-16 (100 FT) 3770.pdf 3M Cable and Accessories.pdf 3M_Cable_SelectionGuide_Letter_HR.pdf
3770-16 (100 FT)
Hersteller: 3M
Category: Ribbon Cables - Single Color
Description: Wire: ribbon; 1.27mm; stranded; Cu; unshielded; grey; 30.5m
Type of wire: ribbon
Ribbon cable pitch: 1.27mm
Core structure: stranded
Kind of core: Cu; tinned
Number of cores: 16
Core diameter: 26AWG
Shield structure: unshielded
Wire insulation material: elastomer thermoplastic TPE
Insulation colour: grey
Operating temperature: -40...105°C
Rated voltage: 50V
A dimension: 20.32mm
B dimension: 19.05mm
Package contents: 30.5m
Conform to the norm: UL 20297
Cable structure: 16x26AWG
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
1+117.5 EUR
3770-16 (100 FT) 3770.pdf 3M Cable and Accessories.pdf 3M_Cable_SelectionGuide_Letter_HR.pdf
3770-16 (100 FT)
Hersteller: 3M
Category: Ribbon Cables - Single Color
Description: Wire: ribbon; 1.27mm; stranded; Cu; unshielded; grey; 30.5m
Type of wire: ribbon
Ribbon cable pitch: 1.27mm
Core structure: stranded
Kind of core: Cu; tinned
Number of cores: 16
Core diameter: 26AWG
Shield structure: unshielded
Wire insulation material: elastomer thermoplastic TPE
Insulation colour: grey
Operating temperature: -40...105°C
Rated voltage: 50V
A dimension: 20.32mm
B dimension: 19.05mm
Package contents: 30.5m
Conform to the norm: UL 20297
Cable structure: 16x26AWG
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
1+117.5 EUR
3770/16 100 3mtm-round-conductor-flat-cable-3770-series-ts0342.pdf
3770/16 100
Hersteller: 3M
Description: CABLE RIBBON 16COND 0.05 GRAY
Packaging: Spool
Features: Zippable
Length: 100.0' (30.48m)
Wire Gauge: 26 AWG
Shielding: Unshielded
Jacket (Insulation) Material: Thermoplastic Elastomer (TPE)
Conductor Strand: 7 Strands / 34 AWG
Pitch: 0.050" (1.27mm)
Operating Temperature: -40°C ~ 105°C
Number of Conductors: 16
Cable Type: Flat Cable
Ratings: UL Style 20297
Jacket Color: Gray
Ribbon Thickness: 0.039" (0.99mm)
Ribbon Width: 0.800" (20.32mm)
Part Status: Active
Voltage: 300 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
100+2.7 EUR
300+ 2.38 EUR
500+ 2.16 EUR
1000+ 1.95 EUR
Mindestbestellmenge: 100
3770/16 100 3mtm-round-conductor-flat-cable-3770-series-ts0342.pdf
3770/16 100
Hersteller: 3M
Description: CBL RIBN 16COND 0.05 GRAY FOOT
Features: Zippable
Packaging: Digi-Spool®, Continuous Spool
Length: Enter Number of Feet in Order Quantity
Wire Gauge: 26 AWG
Shielding: Unshielded
Jacket (Insulation) Material: Thermoplastic Elastomer (TPE)
Conductor Strand: 7 Strands / 34 AWG
Pitch: 0.050" (1.27mm)
Operating Temperature: -40°C ~ 105°C
Number of Conductors: 16
Cable Type: Flat Cable
Ratings: UL Style 20297
Jacket Color: Gray
Ribbon Thickness: 0.039" (0.99mm)
Ribbon Width: 0.800" (20.32mm)
Voltage: 300 V
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+5.19 EUR
5+ 4.13 EUR
10+ 3.75 EUR
25+ 3.3 EUR
50+ 2.99 EUR
100+ 2.7 EUR
Mindestbestellmenge: 4
3770/16-100 ts0342-3441.pdf
3770/16-100
Hersteller: 3M Electronic Solutions Division
Flat Cables .050" 16C TPE ROUND
auf Bestellung 9 Stücke:
Lieferzeit 52-56 Tag (e)
Anzahl Preis ohne MwSt
1+196.8 EUR
10+ 172.18 EUR
20+ 170.58 EUR
50+ 163.36 EUR
10320-3210-000 description 7ebd0a2d75118ba0a754ef182c845c7535dba059-2952285.pdf
10320-3210-000
Hersteller: 3M Electronic Solutions Division
D-Sub Backshells 20P JUNCTION SHELL IDC WIREMOUNT SHIELD
auf Bestellung 389 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+9.05 EUR
10+ 7.64 EUR
IPD50P03P4L11ATMA2 Infineon-IPD50P03P4L-11-DataSheet-v01_02-EN.pdf?fileId=db3a30431ddc9372011e07ebbe0127e8
IPD50P03P4L11ATMA2
Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 50A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 50A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2V @ 85µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 19692 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
9+1.99 EUR
11+ 1.63 EUR
100+ 1.27 EUR
500+ 1.07 EUR
1000+ 0.87 EUR
Mindestbestellmenge: 9
IPD50P03P4L11ATMA2 Infineon-IPD50P03P4L-11-DataSheet-v01_02-EN.pdf?fileId=db3a30431ddc9372011e07ebbe0127e8
IPD50P03P4L11ATMA2
Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 50A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 50A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2V @ 85µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.82 EUR
5000+ 0.78 EUR
12500+ 0.75 EUR
Mindestbestellmenge: 2500
IPP45P03P4L11AKSA1 IPx45P03P4L-11.pdf
IPP45P03P4L11AKSA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 45A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 45A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2V @ 85µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V
auf Bestellung 3538 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
485+1.02 EUR
Mindestbestellmenge: 485
3770/16-100 377009.pdf
3770/16-100
Hersteller: 3M Interconnect Solutions
Flat Cable Thermoplastic Elastomer 16Conductors 26AWG 300V Gray/Blue Edge Roll
Produkt ist nicht verfügbar
39537-7016
39537-7016
Hersteller: Molex
Pluggable Terminal Blocks 5.08MM EURO PLUG VER ERT ME RWE GRN 16CKT
Produkt ist nicht verfügbar
22-28-9200
22-28-9200
Hersteller: Molex
Headers & Wire Housings KK 100 Hdr Assy RA 20 Ckt Tin
Produkt ist nicht verfügbar
22-28-9240
22-28-9240
Hersteller: Molex
Headers & Wire Housings KK 100 Hdr Assy RA B y RA Bkwy 24 Ckt Tin
Produkt ist nicht verfügbar
7000057318 010b6033efa4133f996225db86c60dac36f3a8fb-2952220.pdf
Hersteller: 3M
Flat Cables 3M Round Conductor Flat Cable, 3770 Series, 3770/16, 100 ft
Produkt ist nicht verfügbar
IPB45P03P4L11ATMA1 Infineon-I45P03P4L_11-DS-v01_00-en.pdf?fileId=db3a30431ddc9372011e07ee39732802
IPB45P03P4L11ATMA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 45A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 45A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2V @ 85µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
IPB45P03P4L11ATMA2 Infineon-I45P03P4L_11-DS-v01_00-en.pdf?fileId=db3a30431ddc9372011e07ee39732802
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V) PG-TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 45A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2V @ 85µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
IPD50P03P4L11ATMA1 Infineon-IPD50P03P4L_11-DS-v01_01-en.pdf?folderId=db3a304314dca3890114ef902baa05f9&fileId=db3a30431ddc9372011e07ebbe0127e8&ack=t
IPD50P03P4L11ATMA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 50A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 50A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2V @ 85µA
Supplier Device Package: PG-TO252-3-11
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V
Produkt ist nicht verfügbar
IPD50P03P4L11ATMA1 Infineon-IPD50P03P4L_11-DS-v01_01-en.pdf?folderId=db3a304314dca3890114ef902baa05f9&fileId=db3a30431ddc9372011e07ebbe0127e8&ack=t
IPD50P03P4L11ATMA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 50A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 50A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2V @ 85µA
Supplier Device Package: PG-TO252-3-11
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V
Produkt ist nicht verfügbar
IPI45P03P4L11AKSA1 IPx45P03P4L-11.pdf
IPI45P03P4L11AKSA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 45A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 45A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2V @ 85µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V
Produkt ist nicht verfügbar
IPP45P03P4L11AKSA1 IPx45P03P4L-11.pdf
IPP45P03P4L11AKSA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 45A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 45A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2V @ 85µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V
Produkt ist nicht verfügbar
KJ7T20N16SAL27 MILDTL_38999_fullcatalog-1550610.pdf
Hersteller: ITT Cannon
Circular MIL Spec Connector
Produkt ist nicht verfügbar
SI4654DY-T1-E3 si4654dy.pdf
SI4654DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 28.6A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28.6A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 15A, 10V
Power Dissipation (Max): 2.5W (Ta), 5.9W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 15 V
Produkt ist nicht verfügbar
SI4654DY-T1-GE3 si4654dy.pdf
SI4654DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 28.6A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28.6A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 15A, 10V
Power Dissipation (Max): 2.5W (Ta), 5.9W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 15 V
Produkt ist nicht verfügbar
SI4654DY-T1-GE3 si4654dy.pdf
SI4654DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 28.6A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28.6A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 15A, 10V
Power Dissipation (Max): 2.5W (Ta), 5.9W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 15 V
Produkt ist nicht verfügbar