Suchergebnisse für "3770/16" : 25
Art der Ansicht :
Mindestbestellmenge: 100
Mindestbestellmenge: 4
Mindestbestellmenge: 9
Mindestbestellmenge: 2500
Mindestbestellmenge: 485
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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3770-16 (100 FT) | 3M |
![]() ![]() ![]() Description: Wire: ribbon; 1.27mm; stranded; Cu; unshielded; grey; 30.5m Type of wire: ribbon Ribbon cable pitch: 1.27mm Core structure: stranded Kind of core: Cu; tinned Number of cores: 16 Core diameter: 26AWG Shield structure: unshielded Wire insulation material: elastomer thermoplastic TPE Insulation colour: grey Operating temperature: -40...105°C Rated voltage: 50V A dimension: 20.32mm B dimension: 19.05mm Package contents: 30.5m Conform to the norm: UL 20297 Cable structure: 16x26AWG |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
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3770-16 (100 FT) | 3M |
![]() ![]() ![]() Description: Wire: ribbon; 1.27mm; stranded; Cu; unshielded; grey; 30.5m Type of wire: ribbon Ribbon cable pitch: 1.27mm Core structure: stranded Kind of core: Cu; tinned Number of cores: 16 Core diameter: 26AWG Shield structure: unshielded Wire insulation material: elastomer thermoplastic TPE Insulation colour: grey Operating temperature: -40...105°C Rated voltage: 50V A dimension: 20.32mm B dimension: 19.05mm Package contents: 30.5m Conform to the norm: UL 20297 Cable structure: 16x26AWG Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2 Stücke: Lieferzeit 7-14 Tag (e) |
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3770/16 100 | 3M |
![]() Packaging: Spool Features: Zippable Length: 100.0' (30.48m) Wire Gauge: 26 AWG Shielding: Unshielded Jacket (Insulation) Material: Thermoplastic Elastomer (TPE) Conductor Strand: 7 Strands / 34 AWG Pitch: 0.050" (1.27mm) Operating Temperature: -40°C ~ 105°C Number of Conductors: 16 Cable Type: Flat Cable Ratings: UL Style 20297 Jacket Color: Gray Ribbon Thickness: 0.039" (0.99mm) Ribbon Width: 0.800" (20.32mm) Part Status: Active Voltage: 300 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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3770/16 100 | 3M |
![]() Features: Zippable Packaging: Digi-Spool®, Continuous Spool Length: Enter Number of Feet in Order Quantity Wire Gauge: 26 AWG Shielding: Unshielded Jacket (Insulation) Material: Thermoplastic Elastomer (TPE) Conductor Strand: 7 Strands / 34 AWG Pitch: 0.050" (1.27mm) Operating Temperature: -40°C ~ 105°C Number of Conductors: 16 Cable Type: Flat Cable Ratings: UL Style 20297 Jacket Color: Gray Ribbon Thickness: 0.039" (0.99mm) Ribbon Width: 0.800" (20.32mm) Voltage: 300 V |
auf Bestellung 200 Stücke: Lieferzeit 10-14 Tag (e) |
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3770/16-100 | 3M Electronic Solutions Division |
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auf Bestellung 9 Stücke: Lieferzeit 52-56 Tag (e) |
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10320-3210-000 | 3M Electronic Solutions Division |
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auf Bestellung 389 Stücke: Lieferzeit 10-14 Tag (e) |
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IPD50P03P4L11ATMA2 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 10.5mOhm @ 50A, 10V Power Dissipation (Max): 58W (Tc) Vgs(th) (Max) @ Id: 2V @ 85µA Supplier Device Package: PG-TO252-3-11 Part Status: Active Vgs (Max): +5V, -16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 19692 Stücke: Lieferzeit 10-14 Tag (e) |
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IPD50P03P4L11ATMA2 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 10.5mOhm @ 50A, 10V Power Dissipation (Max): 58W (Tc) Vgs(th) (Max) @ Id: 2V @ 85µA Supplier Device Package: PG-TO252-3-11 Part Status: Active Vgs (Max): +5V, -16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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IPP45P03P4L11AKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 11.1mOhm @ 45A, 10V Power Dissipation (Max): 58W (Tc) Vgs(th) (Max) @ Id: 2V @ 85µA Supplier Device Package: PG-TO220-3-1 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +5V, -16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V |
auf Bestellung 3538 Stücke: Lieferzeit 10-14 Tag (e) |
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3770/16-100 | 3M Interconnect Solutions |
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Produkt ist nicht verfügbar |
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39537-7016 | Molex | Pluggable Terminal Blocks 5.08MM EURO PLUG VER ERT ME RWE GRN 16CKT |
Produkt ist nicht verfügbar |
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22-28-9200 | Molex | Headers & Wire Housings KK 100 Hdr Assy RA 20 Ckt Tin |
Produkt ist nicht verfügbar |
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22-28-9240 | Molex | Headers & Wire Housings KK 100 Hdr Assy RA B y RA Bkwy 24 Ckt Tin |
Produkt ist nicht verfügbar |
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7000057318 | 3M |
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Produkt ist nicht verfügbar |
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IPB45P03P4L11ATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 10.8mOhm @ 45A, 10V Power Dissipation (Max): 58W (Tc) Vgs(th) (Max) @ Id: 2V @ 85µA Supplier Device Package: PG-TO263-3-2 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +5V, -16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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IPB45P03P4L11ATMA2 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 10.8mOhm @ 45A, 10V Power Dissipation (Max): 58W (Tc) Vgs(th) (Max) @ Id: 2V @ 85µA Supplier Device Package: PG-TO263-3-2 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +5V, -16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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IPD50P03P4L11ATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 10.5mOhm @ 50A, 10V Power Dissipation (Max): 58W (Tc) Vgs(th) (Max) @ Id: 2V @ 85µA Supplier Device Package: PG-TO252-3-11 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +5V, -16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V |
Produkt ist nicht verfügbar |
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IPD50P03P4L11ATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 10.5mOhm @ 50A, 10V Power Dissipation (Max): 58W (Tc) Vgs(th) (Max) @ Id: 2V @ 85µA Supplier Device Package: PG-TO252-3-11 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +5V, -16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V |
Produkt ist nicht verfügbar |
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IPI45P03P4L11AKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 11.1mOhm @ 45A, 10V Power Dissipation (Max): 58W (Tc) Vgs(th) (Max) @ Id: 2V @ 85µA Supplier Device Package: PG-TO262-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +5V, -16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V |
Produkt ist nicht verfügbar |
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IPP45P03P4L11AKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 11.1mOhm @ 45A, 10V Power Dissipation (Max): 58W (Tc) Vgs(th) (Max) @ Id: 2V @ 85µA Supplier Device Package: PG-TO220-3-1 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +5V, -16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V |
Produkt ist nicht verfügbar |
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KJ7T20N16SAL27 | ITT Cannon |
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Produkt ist nicht verfügbar |
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SI4654DY-T1-E3 | Vishay Siliconix |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28.6A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 15A, 10V Power Dissipation (Max): 2.5W (Ta), 5.9W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 15 V |
Produkt ist nicht verfügbar |
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SI4654DY-T1-GE3 | Vishay Siliconix |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28.6A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 15A, 10V Power Dissipation (Max): 2.5W (Ta), 5.9W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 15 V |
Produkt ist nicht verfügbar |
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SI4654DY-T1-GE3 | Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28.6A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 15A, 10V Power Dissipation (Max): 2.5W (Ta), 5.9W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 15 V |
Produkt ist nicht verfügbar |
3770-16 (100 FT) |
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Hersteller: 3M
Category: Ribbon Cables - Single Color
Description: Wire: ribbon; 1.27mm; stranded; Cu; unshielded; grey; 30.5m
Type of wire: ribbon
Ribbon cable pitch: 1.27mm
Core structure: stranded
Kind of core: Cu; tinned
Number of cores: 16
Core diameter: 26AWG
Shield structure: unshielded
Wire insulation material: elastomer thermoplastic TPE
Insulation colour: grey
Operating temperature: -40...105°C
Rated voltage: 50V
A dimension: 20.32mm
B dimension: 19.05mm
Package contents: 30.5m
Conform to the norm: UL 20297
Cable structure: 16x26AWG
Category: Ribbon Cables - Single Color
Description: Wire: ribbon; 1.27mm; stranded; Cu; unshielded; grey; 30.5m
Type of wire: ribbon
Ribbon cable pitch: 1.27mm
Core structure: stranded
Kind of core: Cu; tinned
Number of cores: 16
Core diameter: 26AWG
Shield structure: unshielded
Wire insulation material: elastomer thermoplastic TPE
Insulation colour: grey
Operating temperature: -40...105°C
Rated voltage: 50V
A dimension: 20.32mm
B dimension: 19.05mm
Package contents: 30.5m
Conform to the norm: UL 20297
Cable structure: 16x26AWG
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
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1+ | 117.5 EUR |
3770-16 (100 FT) |
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Hersteller: 3M
Category: Ribbon Cables - Single Color
Description: Wire: ribbon; 1.27mm; stranded; Cu; unshielded; grey; 30.5m
Type of wire: ribbon
Ribbon cable pitch: 1.27mm
Core structure: stranded
Kind of core: Cu; tinned
Number of cores: 16
Core diameter: 26AWG
Shield structure: unshielded
Wire insulation material: elastomer thermoplastic TPE
Insulation colour: grey
Operating temperature: -40...105°C
Rated voltage: 50V
A dimension: 20.32mm
B dimension: 19.05mm
Package contents: 30.5m
Conform to the norm: UL 20297
Cable structure: 16x26AWG
Anzahl je Verpackung: 1 Stücke
Category: Ribbon Cables - Single Color
Description: Wire: ribbon; 1.27mm; stranded; Cu; unshielded; grey; 30.5m
Type of wire: ribbon
Ribbon cable pitch: 1.27mm
Core structure: stranded
Kind of core: Cu; tinned
Number of cores: 16
Core diameter: 26AWG
Shield structure: unshielded
Wire insulation material: elastomer thermoplastic TPE
Insulation colour: grey
Operating temperature: -40...105°C
Rated voltage: 50V
A dimension: 20.32mm
B dimension: 19.05mm
Package contents: 30.5m
Conform to the norm: UL 20297
Cable structure: 16x26AWG
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
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1+ | 117.5 EUR |
3770/16 100 |
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Hersteller: 3M
Description: CABLE RIBBON 16COND 0.05 GRAY
Packaging: Spool
Features: Zippable
Length: 100.0' (30.48m)
Wire Gauge: 26 AWG
Shielding: Unshielded
Jacket (Insulation) Material: Thermoplastic Elastomer (TPE)
Conductor Strand: 7 Strands / 34 AWG
Pitch: 0.050" (1.27mm)
Operating Temperature: -40°C ~ 105°C
Number of Conductors: 16
Cable Type: Flat Cable
Ratings: UL Style 20297
Jacket Color: Gray
Ribbon Thickness: 0.039" (0.99mm)
Ribbon Width: 0.800" (20.32mm)
Part Status: Active
Voltage: 300 V
Description: CABLE RIBBON 16COND 0.05 GRAY
Packaging: Spool
Features: Zippable
Length: 100.0' (30.48m)
Wire Gauge: 26 AWG
Shielding: Unshielded
Jacket (Insulation) Material: Thermoplastic Elastomer (TPE)
Conductor Strand: 7 Strands / 34 AWG
Pitch: 0.050" (1.27mm)
Operating Temperature: -40°C ~ 105°C
Number of Conductors: 16
Cable Type: Flat Cable
Ratings: UL Style 20297
Jacket Color: Gray
Ribbon Thickness: 0.039" (0.99mm)
Ribbon Width: 0.800" (20.32mm)
Part Status: Active
Voltage: 300 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
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100+ | 2.7 EUR |
300+ | 2.38 EUR |
500+ | 2.16 EUR |
1000+ | 1.95 EUR |
3770/16 100 |
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Hersteller: 3M
Description: CBL RIBN 16COND 0.05 GRAY FOOT
Features: Zippable
Packaging: Digi-Spool®, Continuous Spool
Length: Enter Number of Feet in Order Quantity
Wire Gauge: 26 AWG
Shielding: Unshielded
Jacket (Insulation) Material: Thermoplastic Elastomer (TPE)
Conductor Strand: 7 Strands / 34 AWG
Pitch: 0.050" (1.27mm)
Operating Temperature: -40°C ~ 105°C
Number of Conductors: 16
Cable Type: Flat Cable
Ratings: UL Style 20297
Jacket Color: Gray
Ribbon Thickness: 0.039" (0.99mm)
Ribbon Width: 0.800" (20.32mm)
Voltage: 300 V
Description: CBL RIBN 16COND 0.05 GRAY FOOT
Features: Zippable
Packaging: Digi-Spool®, Continuous Spool
Length: Enter Number of Feet in Order Quantity
Wire Gauge: 26 AWG
Shielding: Unshielded
Jacket (Insulation) Material: Thermoplastic Elastomer (TPE)
Conductor Strand: 7 Strands / 34 AWG
Pitch: 0.050" (1.27mm)
Operating Temperature: -40°C ~ 105°C
Number of Conductors: 16
Cable Type: Flat Cable
Ratings: UL Style 20297
Jacket Color: Gray
Ribbon Thickness: 0.039" (0.99mm)
Ribbon Width: 0.800" (20.32mm)
Voltage: 300 V
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 5.19 EUR |
5+ | 4.13 EUR |
10+ | 3.75 EUR |
25+ | 3.3 EUR |
50+ | 2.99 EUR |
100+ | 2.7 EUR |
3770/16-100 |
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Hersteller: 3M Electronic Solutions Division
Flat Cables .050" 16C TPE ROUND
Flat Cables .050" 16C TPE ROUND
auf Bestellung 9 Stücke:
Lieferzeit 52-56 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 196.8 EUR |
10+ | 172.18 EUR |
20+ | 170.58 EUR |
50+ | 163.36 EUR |
10320-3210-000 | ![]() |
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Hersteller: 3M Electronic Solutions Division
D-Sub Backshells 20P JUNCTION SHELL IDC WIREMOUNT SHIELD
D-Sub Backshells 20P JUNCTION SHELL IDC WIREMOUNT SHIELD
auf Bestellung 389 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 9.05 EUR |
10+ | 7.64 EUR |
IPD50P03P4L11ATMA2 |
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Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 50A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 50A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2V @ 85µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET P-CH 30V 50A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 50A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2V @ 85µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 19692 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
9+ | 1.99 EUR |
11+ | 1.63 EUR |
100+ | 1.27 EUR |
500+ | 1.07 EUR |
1000+ | 0.87 EUR |
IPD50P03P4L11ATMA2 |
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Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 50A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 50A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2V @ 85µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET P-CH 30V 50A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 50A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2V @ 85µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.82 EUR |
5000+ | 0.78 EUR |
12500+ | 0.75 EUR |
IPP45P03P4L11AKSA1 |
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Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 45A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 45A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2V @ 85µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V
Description: MOSFET P-CH 30V 45A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 45A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2V @ 85µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V
auf Bestellung 3538 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
485+ | 1.02 EUR |
3770/16-100 |
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Hersteller: 3M Interconnect Solutions
Flat Cable Thermoplastic Elastomer 16Conductors 26AWG 300V Gray/Blue Edge Roll
Flat Cable Thermoplastic Elastomer 16Conductors 26AWG 300V Gray/Blue Edge Roll
Produkt ist nicht verfügbar
39537-7016 |
Hersteller: Molex
Pluggable Terminal Blocks 5.08MM EURO PLUG VER ERT ME RWE GRN 16CKT
Pluggable Terminal Blocks 5.08MM EURO PLUG VER ERT ME RWE GRN 16CKT
Produkt ist nicht verfügbar
22-28-9200 |
Hersteller: Molex
Headers & Wire Housings KK 100 Hdr Assy RA 20 Ckt Tin
Headers & Wire Housings KK 100 Hdr Assy RA 20 Ckt Tin
Produkt ist nicht verfügbar
22-28-9240 |
Hersteller: Molex
Headers & Wire Housings KK 100 Hdr Assy RA B y RA Bkwy 24 Ckt Tin
Headers & Wire Housings KK 100 Hdr Assy RA B y RA Bkwy 24 Ckt Tin
Produkt ist nicht verfügbar
7000057318 |
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Hersteller: 3M
Flat Cables 3M Round Conductor Flat Cable, 3770 Series, 3770/16, 100 ft
Flat Cables 3M Round Conductor Flat Cable, 3770 Series, 3770/16, 100 ft
Produkt ist nicht verfügbar
IPB45P03P4L11ATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 45A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 45A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2V @ 85µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET P-CH 30V 45A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 45A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2V @ 85µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
IPB45P03P4L11ATMA2 |
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Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V) PG-TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 45A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2V @ 85µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET_(20V 40V) PG-TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 45A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2V @ 85µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
IPD50P03P4L11ATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 50A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 50A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2V @ 85µA
Supplier Device Package: PG-TO252-3-11
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V
Description: MOSFET P-CH 30V 50A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 50A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2V @ 85µA
Supplier Device Package: PG-TO252-3-11
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V
Produkt ist nicht verfügbar
IPD50P03P4L11ATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 50A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 50A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2V @ 85µA
Supplier Device Package: PG-TO252-3-11
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V
Description: MOSFET P-CH 30V 50A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 50A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2V @ 85µA
Supplier Device Package: PG-TO252-3-11
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V
Produkt ist nicht verfügbar
IPI45P03P4L11AKSA1 |
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Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 45A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 45A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2V @ 85µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V
Description: MOSFET P-CH 30V 45A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 45A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2V @ 85µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V
Produkt ist nicht verfügbar
IPP45P03P4L11AKSA1 |
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Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 45A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 45A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2V @ 85µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V
Description: MOSFET P-CH 30V 45A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 45A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2V @ 85µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V
Produkt ist nicht verfügbar
SI4654DY-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 28.6A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28.6A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 15A, 10V
Power Dissipation (Max): 2.5W (Ta), 5.9W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 15 V
Description: MOSFET N-CH 25V 28.6A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28.6A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 15A, 10V
Power Dissipation (Max): 2.5W (Ta), 5.9W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 15 V
Produkt ist nicht verfügbar
SI4654DY-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 28.6A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28.6A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 15A, 10V
Power Dissipation (Max): 2.5W (Ta), 5.9W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 15 V
Description: MOSFET N-CH 25V 28.6A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28.6A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 15A, 10V
Power Dissipation (Max): 2.5W (Ta), 5.9W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 15 V
Produkt ist nicht verfügbar
SI4654DY-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 28.6A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28.6A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 15A, 10V
Power Dissipation (Max): 2.5W (Ta), 5.9W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 15 V
Description: MOSFET N-CH 25V 28.6A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28.6A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 15A, 10V
Power Dissipation (Max): 2.5W (Ta), 5.9W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 15 V
Produkt ist nicht verfügbar