30KP39CA

30KP39CA MDE Semiconductor Inc


30KP_Series.pdf Hersteller: MDE Semiconductor Inc
Description: TVS DIODE BP 39VRWM 67.2VC
Packaging: Bulk
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 450.9A
Voltage - Reverse Standoff (Typ): 39V
Supplier Device Package: P600
Bidirectional Channels: 1
Voltage - Breakdown (Min): 43.6V
Voltage - Clamping (Max) @ Ipp: 67.2V
Power - Peak Pulse: 30000W (30kW)
Power Line Protection: No
auf Bestellung 1000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+29.96 EUR
Produktrezensionen
Produktbewertung abgeben

Technische Details 30KP39CA MDE Semiconductor Inc

Description: TVS DIODE BP 39VRWM 67.2VC, Packaging: Bulk, Package / Case: P600, Axial, Mounting Type: Through Hole, Type: Zener, Operating Temperature: -55°C ~ 175°C (TJ), Applications: General Purpose, Current - Peak Pulse (10/1000µs): 450.9A, Voltage - Reverse Standoff (Typ): 39V, Supplier Device Package: P600, Bidirectional Channels: 1, Voltage - Breakdown (Min): 43.6V, Voltage - Clamping (Max) @ Ipp: 67.2V, Power - Peak Pulse: 30000W (30kW), Power Line Protection: No.

Weitere Produktangebote 30KP39CA

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
30KP39CA 30KP39CA Hersteller : CDIL 30KP_ser.PDF Category: Bidirectional THT transil diodes
Description: Diode: TVS; 43.6V; 450.9A; bidirectional; R6; 30kW; bulk
Type of diode: TVS
Peak pulse power dissipation: 30kW
Max. off-state voltage: 39V
Breakdown voltage: 43.6V
Max. forward impulse current: 450.9A
Semiconductor structure: bidirectional
Case: R6
Mounting: THT
Leakage current: 4mA
Kind of package: bulk
Features of semiconductor devices: glass passivated
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
30KP39CA 30KP39CA Hersteller : CDIL 30KP_ser.PDF Category: Bidirectional THT transil diodes
Description: Diode: TVS; 43.6V; 450.9A; bidirectional; R6; 30kW; bulk
Type of diode: TVS
Peak pulse power dissipation: 30kW
Max. off-state voltage: 39V
Breakdown voltage: 43.6V
Max. forward impulse current: 450.9A
Semiconductor structure: bidirectional
Case: R6
Mounting: THT
Leakage current: 4mA
Kind of package: bulk
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar