Produkte > ON SEMICONDUCTOR > 2SK4177-DL-E

2SK4177-DL-E ON Semiconductor


ena0869.pdf Hersteller: ON Semiconductor
Trans MOSFET N-CH Si 1.5KV 2A 3-Pin(2+Tab) SMP-FD T/R
Produkt ist nicht verfügbar

Produktrezensionen
Produktbewertung abgeben

Technische Details 2SK4177-DL-E ON Semiconductor

Description: MOSFET N-CH 1500V 2A SMP-FD, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), Rds On (Max) @ Id, Vgs: 13Ohm @ 1A, 10V, Power Dissipation (Max): 80W (Tc), Supplier Device Package: SMP-FD, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 1500 V, Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 30 V.

Weitere Produktangebote 2SK4177-DL-E

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
2SK4177-DL-E 2SK4177-DL-E Hersteller : onsemi ena0869-d.pdf Description: MOSFET N-CH 1500V 2A SMP-FD
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 13Ohm @ 1A, 10V
Power Dissipation (Max): 80W (Tc)
Supplier Device Package: SMP-FD
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 30 V
Produkt ist nicht verfügbar
2SK4177-DL-E 2SK4177-DL-E Hersteller : onsemi ENA0869_D-260380.pdf MOSFET POWER MOSFET
Produkt ist nicht verfügbar