2SK4151TZ-E

2SK4151TZ-E Renesas Electronics Corporation


2sk4151-datasheet?language=en Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 150V 1A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 1.95Ohm @ 500mA, 4V
Power Dissipation (Max): 750mW (Ta)
Supplier Device Package: TO-92
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 98 pF @ 10 V
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Technische Details 2SK4151TZ-E Renesas Electronics Corporation

Description: MOSFET N-CH 150V 1A TO92, Packaging: Tape & Reel (TR), Package / Case: TO-226-3, TO-92-3 (TO-226AA), Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1A (Ta), Rds On (Max) @ Id, Vgs: 1.95Ohm @ 500mA, 4V, Power Dissipation (Max): 750mW (Ta), Supplier Device Package: TO-92, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 4 V, Input Capacitance (Ciss) (Max) @ Vds: 98 pF @ 10 V.

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2SK4151TZ-E 2SK4151TZ-E Hersteller : Renesas Electronics rej03g1901_2sk4151ds-1090495.pdf MOSFET MOSFET
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