2SK4085LS-1E Sanyo
Hersteller: SanyoDescription: N-CHANNEL SILICON MOSFET
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 8A, 10V
Power Dissipation (Max): 2W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220F-3FS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 46.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V
auf Bestellung 400 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 214+ | 2.28 EUR |
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Technische Details 2SK4085LS-1E Sanyo
Description: N-CHANNEL SILICON MOSFET, Packaging: Bulk, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 430mOhm @ 8A, 10V, Power Dissipation (Max): 2W (Ta), 40W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: TO-220F-3FS, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 46.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V.
Weitere Produktangebote 2SK4085LS-1E nach Preis ab 2.28 EUR bis 2.28 EUR
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2SK4085LS-1E | Hersteller : Fairchild Semiconductor |
Description: MOSFET N-CH 500V 11A TO220F-3FS Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 430mOhm @ 8A, 10V Power Dissipation (Max): 2W (Ta), 40W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-220F-3FS Part Status: Obsolete Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 46.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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2SK4085LS-1E | Hersteller : onsemi |
Description: MOSFET N-CH 500V 11A TO220F-3FS Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 430mOhm @ 8A, 10V Power Dissipation (Max): 2W (Ta), 40W (Tc) Supplier Device Package: TO-220F-3FS Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 46.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V |
auf Bestellung 136773 Stücke: Lieferzeit 10-14 Tag (e) |
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2SK4085LS-1E | Hersteller : onsemi |
Description: MOSFET N-CH 500V 11A TO220F-3FS Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 430mOhm @ 8A, 10V Power Dissipation (Max): 2W (Ta), 40W (Tc) Supplier Device Package: TO-220F-3FS Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 46.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V |
Produkt ist nicht verfügbar |
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2SK4085LS-1E | Hersteller : onsemi |
MOSFET NCH 10V DRIVE SERIES |
Produkt ist nicht verfügbar |