Technische Details 2SK3798(STA4,Q,M) Toshiba
Description: POWER MOSFET TRANSISTOR TO-220(S, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), Rds On (Max) @ Id, Vgs: 3.5Ohm @ 2A, 10V, Power Dissipation (Max): 40W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-220SIS, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 900 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V.
Weitere Produktangebote 2SK3798(STA4,Q,M)
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2SK3798(STA4,Q,M) | Hersteller : Toshiba |
 Trans MOSFET N-CH Si 900V 4A 3-Pin(3+Tab) TO-220SIS |
Produkt ist nicht verfügbar |
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| 2SK3798(STA4,Q,M) | Hersteller : Toshiba Semiconductor and Storage |
Description: POWER MOSFET TRANSISTOR TO-220(S Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 3.5Ohm @ 2A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220SIS Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V |
Produkt ist nicht verfügbar |
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2SK3798(STA4,Q,M) | Hersteller : Toshiba |
MOSFETs POWER MOSFET TRANSISTOR TO-220(SIS)PD=40W F=1MHZ |
Produkt ist nicht verfügbar |