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2SK3479-Z-E1-AZ


2sk3479-data-sheet?language=en Hersteller:

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Lieferzeit 21-28 Tag (e)
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Technische Details 2SK3479-Z-E1-AZ

Description: MOSFET N-CH 100V 83A TO-263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 83A (Tc), Rds On (Max) @ Id, Vgs: 11mOhm @ 42A, 10V, Power Dissipation (Max): 1.5W (Ta), 125W (Tc), Supplier Device Package: TO-263, TO-220SMD, Part Status: Last Time Buy, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 10 V.

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2SK3479-Z-E1-AZ 2SK3479-Z-E1-AZ Hersteller : Renesas Electronics Corporation 2sk3479-data-sheet?language=en Description: MOSFET N-CH 100V 83A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 42A, 10V
Power Dissipation (Max): 1.5W (Ta), 125W (Tc)
Supplier Device Package: TO-263, TO-220SMD
Part Status: Last Time Buy
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 10 V
Produkt ist nicht verfügbar
2SK3479-Z-E1-AZ 2SK3479-Z-E1-AZ Hersteller : Renesas Electronics 2sk3479-data-sheet?language=en MOSFET
Produkt ist nicht verfügbar