2SK3430-AZ Renesas Electronics Corporation
Hersteller: Renesas Electronics CorporationDescription: MOSFET N-CH 40V 80A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 40A, 10V
Power Dissipation (Max): 1.5W (Ta), 84W (Tc)
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 10 V
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Technische Details 2SK3430-AZ Renesas Electronics Corporation
Description: MOSFET N-CH 40V 80A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 7.3mOhm @ 40A, 10V, Power Dissipation (Max): 1.5W (Ta), 84W (Tc), Supplier Device Package: TO-220AB, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 10 V.
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2SK3430-AZ | Hersteller : Renesas Electronics |
MOSFET MOSFET |
Produkt ist nicht verfügbar |