2SK3408-T1B-AT Renesas Electronics Corporation


2SK3408_4thEd_May2003.pdf Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 43V 1A SC96-3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 195mOhm @ 500mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: SC-96-3, Thin Mini Mold
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 43 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 10 V
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Technische Details 2SK3408-T1B-AT Renesas Electronics Corporation

Description: MOSFET N-CH 43V 1A SC96-3, Packaging: Tape & Reel (TR), Package / Case: SC-96, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1A (Ta), Rds On (Max) @ Id, Vgs: 195mOhm @ 500mA, 10V, Power Dissipation (Max): 200mW (Ta), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: SC-96-3, Thin Mini Mold, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 43 V, Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 10 V.

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2SK3408-T1B-AT Hersteller : Renesas Electronics 2SK3408_4thEd_May2003.pdf Renesas Electronics
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