2SK2145-Y(TE85L,F) Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: JFET 2N-CH SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
FET Type: 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
Supplier Device Package: SMV
Part Status: Active
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 200 mV @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0): 1.2 mA @ 10 V
Description: JFET 2N-CH SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
FET Type: 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
Supplier Device Package: SMV
Part Status: Active
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 200 mV @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0): 1.2 mA @ 10 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.4 EUR |
6000+ | 0.37 EUR |
9000+ | 0.36 EUR |
15000+ | 0.34 EUR |
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Technische Details 2SK2145-Y(TE85L,F) Toshiba Semiconductor and Storage
Description: JFET 2N-CH SMV, Packaging: Tape & Reel (TR), Package / Case: SC-74A, SOT-753, Mounting Type: Surface Mount, Operating Temperature: 125°C (TJ), FET Type: 2 N-Channel (Dual), Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V, Supplier Device Package: SMV, Part Status: Active, Power - Max: 300 mW, Voltage - Cutoff (VGS off) @ Id: 200 mV @ 100 nA, Current - Drain (Idss) @ Vds (Vgs=0): 1.2 mA @ 10 V.
Weitere Produktangebote 2SK2145-Y(TE85L,F) nach Preis ab 0.4 EUR bis 1.64 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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2SK2145-Y(TE85L,F) | Hersteller : Toshiba Semiconductor and Storage |
Description: JFET 2N-CH SMV Packaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Operating Temperature: 125°C (TJ) FET Type: 2 N-Channel (Dual) Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V Supplier Device Package: SMV Part Status: Active Power - Max: 300 mW Voltage - Cutoff (VGS off) @ Id: 200 mV @ 100 nA Current - Drain (Idss) @ Vds (Vgs=0): 1.2 mA @ 10 V |
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