Technische Details 2SK2095N TOSHIBA
Description: MOSFET N-CH 60V 10A TO220FN, Packaging: Bulk, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), Rds On (Max) @ Id, Vgs: 95mOhm @ 5A, 10V, Power Dissipation (Max): 30W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TO-220FN, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 10 V.
Weitere Produktangebote 2SK2095N
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| 2SK2095N | Hersteller : TOSHIBA |
 07+ |
auf Bestellung 6500 Stücke: Lieferzeit 21-28 Tag (e) |
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2SK2095N | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 60V 10A TO220FN Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 95mOhm @ 5A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TO-220FN Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 10 V |
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