2SJ673-AZ

2SJ673-AZ Renesas Electronics


D17210EJ1V0DS00-1090215.pdf Hersteller: Renesas Electronics
MOSFET MOSFET
auf Bestellung 14 Stücke:

Lieferzeit 10-14 Tag (e)
Produktrezensionen
Produktbewertung abgeben

Technische Details 2SJ673-AZ Renesas Electronics

Description: MOSFET P-CH 60V 36A TO220, Packaging: Bulk, Package / Case: TO-220-3 Isolated Tab, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 36A (Tc), Rds On (Max) @ Id, Vgs: 20mOhm @ 18A, 10V, Power Dissipation (Max): 2W (Ta), 32W (Tc), Supplier Device Package: TO-220 Isolated Tab, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 10 V.

Weitere Produktangebote 2SJ673-AZ

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
2SJ673-AZ Hersteller : Renesas Electronics Corporation 2sj673-data-sheet Description: MOSFET P-CH 60V 36A TO220
Packaging: Bulk
Package / Case: TO-220-3 Isolated Tab
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 18A, 10V
Power Dissipation (Max): 2W (Ta), 32W (Tc)
Supplier Device Package: TO-220 Isolated Tab
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 10 V
Produkt ist nicht verfügbar