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2SJ168TE85LF

2SJ168TE85LF Toshiba Semiconductor and Storage

2SJ168_datasheet_en_20140301.pdf?did=19506&prodName=2SJ168 Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 60V 200MA SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 10V
Power Dissipation (Max): 200mW (Ta)
Supplier Device Package: SC-59
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 10 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.53 EUR
6000+ 0.49 EUR
9000+ 0.47 EUR
Mindestbestellmenge: 3000
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Technische Details 2SJ168TE85LF Toshiba Semiconductor and Storage

Description: MOSFET P-CH 60V 200MA SC59, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 200mA (Ta), Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 10V, Power Dissipation (Max): 200mW (Ta), Supplier Device Package: SC-59, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 10 V.

Weitere Produktangebote 2SJ168TE85LF nach Preis ab 0.49 EUR bis 2.06 EUR

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2SJ168TE85LF 2SJ168TE85LF Hersteller : Toshiba 2SJ168_datasheet_en_20140301-2328973.pdf MOSFET P-Ch Sm Sig FET Id -0.2A -60V 20V
auf Bestellung 5689 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+1.37 EUR
10+ 1.19 EUR
100+ 0.82 EUR
500+ 0.69 EUR
1000+ 0.58 EUR
3000+ 0.52 EUR
6000+ 0.49 EUR
Mindestbestellmenge: 3
2SJ168TE85LF 2SJ168TE85LF Hersteller : Toshiba Semiconductor and Storage 2SJ168_datasheet_en_20140301.pdf?did=19506&prodName=2SJ168 Description: MOSFET P-CH 60V 200MA SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 10V
Power Dissipation (Max): 200mW (Ta)
Supplier Device Package: SC-59
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 10 V
auf Bestellung 12635 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
9+2.06 EUR
14+ 1.3 EUR
100+ 0.86 EUR
500+ 0.67 EUR
1000+ 0.61 EUR
Mindestbestellmenge: 9
2SJ168TE85LF 2SJ168TE85LF
Produktcode: 101280 		2SJ168_datasheet_en_20140301.pdf?did=19506&prodName=2SJ168 Transistoren > Transistoren P-Kanal-Feld
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