Technische Details 2SJ162-E Renesas
Description: MOSFET P-CH 160V 7A TO3P, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Ta), Power Dissipation (Max): 100W (Tc), Supplier Device Package: TO-3P, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 160 V, Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 10 V.
Weitere Produktangebote 2SJ162-E
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2SJ162-E | Hersteller : Renesas Electronics Corporation |
 Description: MOSFET P-CH 160V 7A TO3PPackaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Power Dissipation (Max): 100W (Tc) Supplier Device Package: TO-3P Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 160 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 10 V |
Produkt ist nicht verfügbar |
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2SJ162-E | Hersteller : Renesas Electronics |
MOSFET Power MOSFET |
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2SJ162-E | Hersteller : RENESAS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -160V; 100W; SOT93 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -160V Power: 0.1kW Case: SOT93 On-state resistance: 0.3Ω Mounting: SMD Average continuous current: -7A |
Produkt ist nicht verfügbar |