2SD600KE onsemi
Hersteller: onsemiDescription: BIP NPN 1A 100V
Packaging: Bulk
Part Status: Active
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 50mA, 5V
Frequency - Transition: 130MHz
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 1 W
auf Bestellung 31862 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1110+ | 0.44 EUR |
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Technische Details 2SD600KE onsemi
Description: BIP NPN 1A 100V, Packaging: Bulk, Part Status: Active, Package / Case: TO-225AA, TO-126-3, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA, Current - Collector Cutoff (Max): 1µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 50mA, 5V, Frequency - Transition: 130MHz, Supplier Device Package: TO-126, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 120 V, Power - Max: 1 W.
Weitere Produktangebote 2SD600KE
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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2SD600KE | Hersteller : ONSEMI |
Description: ONSEMI - 2SD600KE - 2SD600 - BIPOLAR NPN TRANSISTOR, 1A 100V tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 31862 Stücke: Lieferzeit 14-21 Tag (e) |