Produkte > ROHM SEMICONDUCTOR > 2SD1898T100P
2SD1898T100P

2SD1898T100P Rohm Semiconductor


2sd1898t100r-e.pdf Hersteller: Rohm Semiconductor
Description: TRANS NPN 80V 1A MPT3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 500mA, 3V
Frequency - Transition: 100MHz
Supplier Device Package: MPT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
auf Bestellung 990 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
11+1.6 EUR
18+ 1 EUR
100+ 0.66 EUR
500+ 0.51 EUR
Mindestbestellmenge: 11
Produktrezensionen
Produktbewertung abgeben

Technische Details 2SD1898T100P Rohm Semiconductor

Description: TRANS NPN 80V 1A MPT3, Packaging: Tape & Reel (TR), Package / Case: TO-243AA, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 500mA, Current - Collector Cutoff (Max): 1µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 500mA, 3V, Frequency - Transition: 100MHz, Supplier Device Package: MPT3, Part Status: Not For New Designs, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 80 V, Power - Max: 2 W.

Weitere Produktangebote 2SD1898T100P nach Preis ab 0.36 EUR bis 1.03 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
2SD1898T100P Hersteller : ROHM Semiconductor rohms14026-1.pdf Bipolar Transistors - BJT DVR NPN 80V 1A
auf Bestellung 833 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+1.03 EUR
10+ 0.98 EUR
100+ 0.65 EUR
500+ 0.53 EUR
1000+ 0.36 EUR
Mindestbestellmenge: 3
2SD1898T100P 2SD1898T100P Hersteller : Rohm Semiconductor 2sd1898t100r-e.pdf Description: TRANS NPN 80V 1A MPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 500mA, 3V
Frequency - Transition: 100MHz
Supplier Device Package: MPT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
Produkt ist nicht verfügbar