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2SD1664T100P

2SD1664T100P Rohm Semiconductor


2sd1664.pdf Hersteller: Rohm Semiconductor
Trans GP BJT NPN 32V 1A 2000mW 4-Pin(3+Tab) MPT T/R
auf Bestellung 13000 Stücke:

Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
1000+0.16 EUR
Mindestbestellmenge: 1000
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Technische Details 2SD1664T100P Rohm Semiconductor

Description: TRANS NPN 32V 1A MPT3, Packaging: Tape & Reel (TR), Package / Case: TO-243AA, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA, Current - Collector Cutoff (Max): 500nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 100mA, 3V, Frequency - Transition: 150MHz, Supplier Device Package: MPT3, Part Status: Not For New Designs, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 32 V, Power - Max: 2 W.

Weitere Produktangebote 2SD1664T100P nach Preis ab 0.25 EUR bis 0.69 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
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2SD1664T100P 2SD1664T100P Hersteller : Rohm Semiconductor 2sd1664,1858.pdf Description: TRANS NPN 32V 1A MPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 100mA, 3V
Frequency - Transition: 150MHz
Supplier Device Package: MPT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 2 W
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1000+0.25 EUR
Mindestbestellmenge: 1000
2SD1664T100P 2SD1664T100P Hersteller : Rohm Semiconductor 2sd1664,1858.pdf Description: TRANS NPN 32V 1A MPT3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 100mA, 3V
Frequency - Transition: 150MHz
Supplier Device Package: MPT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 2 W
auf Bestellung 1253 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
26+0.69 EUR
31+ 0.58 EUR
100+ 0.4 EUR
500+ 0.31 EUR
Mindestbestellmenge: 26
2SD1664T100P Hersteller : ROHM Semiconductor rohm_semiconductor_rohms11678-1-1742487.pdf Bipolar Transistors - BJT NPN 32V 1A
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