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2SD1061R

2SD1061R onsemi

SNYOS08273-1.pdf?t.download=true&u=5oefqw Hersteller: onsemi
Description: POWER BIPOLAR TRANSISTOR NPN
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 400mA, 4A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V
Frequency - Transition: 10MHz
Supplier Device Package: TO-220AB
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 40 W
auf Bestellung 1543 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
523+0.94 EUR
Mindestbestellmenge: 523
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Technische Details 2SD1061R onsemi

Description: POWER BIPOLAR TRANSISTOR NPN, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 400mV @ 400mA, 4A, Current - Collector Cutoff (Max): 100µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V, Frequency - Transition: 10MHz, Supplier Device Package: TO-220AB, Current - Collector (Ic) (Max): 7 A, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 40 W.

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2SD1061R Hersteller : ONSEMI SNYOS08273-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0 Description: ONSEMI - 2SD1061R - 2SD1061R, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 1543 Stücke:
Lieferzeit 14-21 Tag (e)