Produkte > ON SEMICONDUCTOR > 2SD1060R-1E
2SD1060R-1E

2SD1060R-1E ON Semiconductor

276en686-d.pdf Hersteller: ON Semiconductor
Trans GP BJT NPN 50V 5A 17500mW 3-Pin(3+Tab) TO-220 Tube
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben

Technische Details 2SD1060R-1E ON Semiconductor

Description: TRANS NPN 50V 5A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 300mV @ 300mA, 3A, Current - Collector Cutoff (Max): 100µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V, Frequency - Transition: 30MHz, Supplier Device Package: TO-220-3, Current - Collector (Ic) (Max): 5 A, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 1.75 W.

Weitere Produktangebote 2SD1060R-1E

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
2SD1060R-1E 2SD1060R-1E Hersteller : onsemi en686-d.pdf Description: TRANS NPN 50V 5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V
Frequency - Transition: 30MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.75 W
Produkt ist nicht verfügbar
2SD1060R-1E Hersteller : ON Semiconductor EN686-D-1803586.pdf Bipolar Transistors - BJT BIP NPN 5A 50V
Produkt ist nicht verfügbar