2SD1012G-SPA onsemi
Hersteller: onsemi
Description: TRANS NPN 15V 0.7A 3SPA
Packaging: Bulk
Package / Case: 3-SIP
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 80mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 280 @ 50mA, 2V
Frequency - Transition: 250MHz
Supplier Device Package: 3-SPA
Part Status: Obsolete
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 250 mW
Description: TRANS NPN 15V 0.7A 3SPA
Packaging: Bulk
Package / Case: 3-SIP
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 80mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 280 @ 50mA, 2V
Frequency - Transition: 250MHz
Supplier Device Package: 3-SPA
Part Status: Obsolete
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 250 mW
auf Bestellung 6500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
2959+ | 0.16 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details 2SD1012G-SPA onsemi
Description: TRANS NPN 15V 0.7A 3SPA, Packaging: Bulk, Package / Case: 3-SIP, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 125°C (TJ), Vce Saturation (Max) @ Ib, Ic: 80mV @ 10mA, 100mA, Current - Collector Cutoff (Max): 1µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 280 @ 50mA, 2V, Frequency - Transition: 250MHz, Supplier Device Package: 3-SPA, Part Status: Obsolete, Current - Collector (Ic) (Max): 700 mA, Voltage - Collector Emitter Breakdown (Max): 15 V, Power - Max: 250 mW.
Weitere Produktangebote 2SD1012G-SPA
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
---|---|---|---|---|---|
2SD1012G-SPA | Hersteller : ONSEMI |
Description: ONSEMI - 2SD1012G-SPA - 2SD1012G-SPA, SINGLE BIPOLAR TRANSISTORS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 6500 Stücke: Lieferzeit 14-21 Tag (e) |
||
2SD1012G-SPA | Hersteller : onsemi |
Description: TRANS NPN 15V 0.7A 3SPA Packaging: Bulk Package / Case: 3-SIP Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 80mV @ 10mA, 100mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 280 @ 50mA, 2V Frequency - Transition: 250MHz Supplier Device Package: 3-SPA Part Status: Obsolete Current - Collector (Ic) (Max): 700 mA Voltage - Collector Emitter Breakdown (Max): 15 V Power - Max: 250 mW |
Produkt ist nicht verfügbar |
||
2SD1012G-SPA | Hersteller : onsemi | Bipolar Transistors - BJT BIP NPN 0.7A 15V |
Produkt ist nicht verfügbar |