2SC5610 onsemi
Hersteller: onsemiDescription: POWER BIPOLAR TRANSISTOR NPN
Packaging: Bulk
Part Status: Active
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 260mV @ 125mA, 2.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1A, 2V
Frequency - Transition: 290MHz
Supplier Device Package: TO-220ML
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 18 W
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 606+ | 0.82 EUR |
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Technische Details 2SC5610 onsemi
Description: POWER BIPOLAR TRANSISTOR NPN, Packaging: Bulk, Part Status: Active, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 260mV @ 125mA, 2.5A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1A, 2V, Frequency - Transition: 290MHz, Supplier Device Package: TO-220ML, Current - Collector (Ic) (Max): 7 A, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 18 W.
Weitere Produktangebote 2SC5610
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| 2SC5610 | Hersteller : ONSEMI |
Description: ONSEMI - 2SC5610 - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |