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2SC4102U3T106R

2SC4102U3T106R Rohm Semiconductor

2sc4102u3t106r-e.pdf Hersteller: Rohm Semiconductor
Trans GP BJT NPN 120V 0.05A 200mW 3-Pin UMT T/R
auf Bestellung 2592 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
459+0.33 EUR
500+ 0.31 EUR
1000+ 0.29 EUR
2500+ 0.27 EUR
Mindestbestellmenge: 459
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Technische Details 2SC4102U3T106R Rohm Semiconductor

Description: 2SC4102U3 IS A TRANSISTOR FOR HI, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A, Current - Collector Cutoff (Max): 500nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 390 @ 500mA, 6V, Supplier Device Package: UMT3, Current - Collector (Ic) (Max): 50 mA, Voltage - Collector Emitter Breakdown (Max): 120 V, Power - Max: 200 mW.

Weitere Produktangebote 2SC4102U3T106R nach Preis ab 0.14 EUR bis 0.64 EUR

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2SC4102U3T106R 2SC4102U3T106R Hersteller : ROHM Semiconductor ROHM_S_A0007108740_1-2562132.pdf Bipolar Transistors - BJT Transistor for high-volt amp
auf Bestellung 3338 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+0.64 EUR
10+ 0.5 EUR
100+ 0.28 EUR
1000+ 0.19 EUR
3000+ 0.17 EUR
9000+ 0.15 EUR
24000+ 0.14 EUR
Mindestbestellmenge: 5
2SC4102U3T106R Hersteller : Rohm Semiconductor 2sc4102u3t106r-e.pdf Description: 2SC4102U3 IS A TRANSISTOR FOR HI
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 390 @ 500mA, 6V
Supplier Device Package: UMT3
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 200 mW
Produkt ist nicht verfügbar
2SC4102U3T106R Hersteller : Rohm Semiconductor 2sc4102u3t106r-e.pdf Description: 2SC4102U3 IS A TRANSISTOR FOR HI
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 390 @ 500mA, 6V
Supplier Device Package: UMT3
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 200 mW
Produkt ist nicht verfügbar