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2SC3632-Z-E1-AZ


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Technische Details 2SC3632-Z-E1-AZ

Description: POWER BIPOLAR TRANSISTOR NPN, Packaging: Bulk, Part Status: Active, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -65°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1V @ 80mA, 400mA, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 100mA, 5V, Frequency - Transition: 30MHz, Supplier Device Package: TO-252 (MP-3Z), Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 2 W.

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2SC3632-Z-E1-AZ Hersteller : Renesas Electronics America Inc RNCCS04618-1.pdf?t.download=true&u=5oefqw Description: POWER BIPOLAR TRANSISTOR NPN
Packaging: Bulk
Part Status: Active
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 80mA, 400mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 100mA, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-252 (MP-3Z)
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 2 W
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2SC3632-Z-E1-AZ Hersteller : Renesas Electronics RNCCS04618-1.pdf?t.download=true&u=5oefqw Bipolar Transistors - BJT
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