Technische Details 2SC3632-Z-E1-AZ
Description: POWER BIPOLAR TRANSISTOR NPN, Packaging: Bulk, Part Status: Active, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -65°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1V @ 80mA, 400mA, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 100mA, 5V, Frequency - Transition: 30MHz, Supplier Device Package: TO-252 (MP-3Z), Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 2 W.
Weitere Produktangebote 2SC3632-Z-E1-AZ
Foto | Bezeichnung | Hersteller | Beschreibung |
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2SC3632-Z-E1-AZ | Hersteller : Renesas Electronics America Inc |
![]() Packaging: Bulk Part Status: Active Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 80mA, 400mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 100mA, 5V Frequency - Transition: 30MHz Supplier Device Package: TO-252 (MP-3Z) Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 2 W |
Produkt ist nicht verfügbar |
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2SC3632-Z-E1-AZ | Hersteller : Renesas Electronics |
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Produkt ist nicht verfügbar |