2SC3596E onsemi
Hersteller: onsemiDescription: POWER BIPOLAR TRANSISTOR NPN
Packaging: Bulk
Part Status: Active
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Frequency - Transition: 700MHz
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.2 W
auf Bestellung 17014 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 437+ | 1.12 EUR |
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Technische Details 2SC3596E onsemi
Description: POWER BIPOLAR TRANSISTOR NPN, Packaging: Bulk, Part Status: Active, Package / Case: TO-225AA, TO-126-3, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 600mV @ 10mA, 100mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V, Frequency - Transition: 700MHz, Supplier Device Package: TO-126, Current - Collector (Ic) (Max): 300 mA, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 1.2 W.
Weitere Produktangebote 2SC3596E
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| 2SC3596E | Hersteller : ONSEMI |
Description: ONSEMI - 2SC3596E - 2SC3596E, SINGLE BIPOLAR TRANSISTORS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 12014 Stücke: Lieferzeit 14-21 Tag (e) |