2SC2839E-SPA-AC ONSEMI
![2SC2839.pdf](/images/adobe-acrobat.png)
Description: ONSEMI - 2SC2839E-SPA-AC - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 11700 Stücke:
Lieferzeit 14-21 Tag (e)
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Technische Details 2SC2839E-SPA-AC ONSEMI
Description: NPN EPITAXIAL PLANAR SILICON, Packaging: Bulk, Package / Case: 3-SIP, Mounting Type: Through Hole, Transistor Type: NPN, Gain: 25dB, Power - Max: 150mW, Current - Collector (Ic) (Max): 30mA, Voltage - Collector Emitter Breakdown (Max): 20V, DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1mA, 6V, Frequency - Transition: 320MHz, Noise Figure (dB Typ @ f): 3dB @ 100MHz, Supplier Device Package: 3-SPA, Part Status: Active.
Weitere Produktangebote 2SC2839E-SPA-AC
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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2SC2839E-SPA-AC | Hersteller : onsemi |
![]() Packaging: Bulk Package / Case: 3-SIP Mounting Type: Through Hole Transistor Type: NPN Gain: 25dB Power - Max: 150mW Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 20V DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1mA, 6V Frequency - Transition: 320MHz Noise Figure (dB Typ @ f): 3dB @ 100MHz Supplier Device Package: 3-SPA Part Status: Active |
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