2SC2271E-AE Sanyo
Hersteller: SanyoDescription: NPN EPITAXIAL PLANAR SILICON
Packaging: Bulk
Part Status: Active
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: 3-MP
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 900 mW
auf Bestellung 6824 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 5323+ | 0.097 EUR |
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Technische Details 2SC2271E-AE Sanyo
Description: NPN EPITAXIAL PLANAR SILICON, Packaging: Bulk, Part Status: Active, Package / Case: TO-226-3, TO-92-3 Long Body, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 600mV @ 2mA, 20mA, Current - Collector Cutoff (Max): 1µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V, Frequency - Transition: 50MHz, Supplier Device Package: 3-MP, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 300 V, Power - Max: 900 mW.
Weitere Produktangebote 2SC2271E-AE
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| 2SC2271E-AE | Hersteller : ONSEMI |
Description: ONSEMI - 2SC2271E-AE - 2SC2271E-AE, SINGLE BIPOLAR TRANSISTORS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 6824 Stücke: Lieferzeit 14-21 Tag (e) |