2SC1941-AZ Renesas Electronics Corporation
Hersteller: Renesas Electronics Corporation
Description: SMALL SIGNAL BIPOLAR TRANSTR NPN
Packaging: Bulk
Part Status: Active
Package / Case: 3-SSIP
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 10mA, 10V
Frequency - Transition: 120MHz
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 1 W
Description: SMALL SIGNAL BIPOLAR TRANSTR NPN
Packaging: Bulk
Part Status: Active
Package / Case: 3-SSIP
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 10mA, 10V
Frequency - Transition: 120MHz
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 1 W
auf Bestellung 20956 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1353+ | 0.36 EUR |
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Technische Details 2SC1941-AZ Renesas Electronics Corporation
Description: SMALL SIGNAL BIPOLAR TRANSTR NPN, Packaging: Bulk, Part Status: Active, Package / Case: 3-SSIP, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 600mV @ 2mA, 20mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 10mA, 10V, Frequency - Transition: 120MHz, Current - Collector (Ic) (Max): 50 mA, Voltage - Collector Emitter Breakdown (Max): 160 V, Power - Max: 1 W.
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2SC1941-AZ | Hersteller : Renesas Electronics | Renesas Electronics |
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