Produkte > CENTRAL SEMICONDUCTOR > 2SC1815 TIN/LEAD
2SC1815 TIN/LEAD

2SC1815 TIN/LEAD Central Semiconductor


get_document-1149989.pdf Hersteller: Central Semiconductor
Bipolar Transistors - BJT 60Vcbo 50Vceo 5.0V 150mA 400mA 400mW
auf Bestellung 1380 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.80 EUR
10+1.47 EUR
100+1.14 EUR
500+0.97 EUR
1000+0.83 EUR
2500+0.70 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details 2SC1815 TIN/LEAD Central Semiconductor

Description: 50V 150MA 400MW TH TRANSISTOR-SM, Packaging: Box, Package / Case: TO-226-3, TO-92-3 (TO-226AA), Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -55°C ~ 125°C (TJ), Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA, Current - Collector Cutoff (Max): 100nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V, Frequency - Transition: 80MHz, Supplier Device Package: TO-92-3, Current - Collector (Ic) (Max): 150 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 400 mW.

Weitere Produktangebote 2SC1815 TIN/LEAD

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
2SC1815 TIN/LEAD 2SC1815 TIN/LEAD Hersteller : Central Semiconductor Corp Description: 50V 150MA 400MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 400 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH