2SB817C onsemi
Hersteller: onsemiDescription: PNP SILICON TRANSISTOR
Packaging: Bulk
Part Status: Active
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 500mA, 5A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V
Frequency - Transition: 10MHz
Supplier Device Package: TO-3P-3
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 2.5 W
auf Bestellung 17513 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 126+ | 3.92 EUR |
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Technische Details 2SB817C onsemi
Description: PNP SILICON TRANSISTOR, Packaging: Bulk, Part Status: Active, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 2V @ 500mA, 5A, Current - Collector Cutoff (Max): 100µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V, Frequency - Transition: 10MHz, Supplier Device Package: TO-3P-3, Current - Collector (Ic) (Max): 12 A, Voltage - Collector Emitter Breakdown (Max): 140 V, Power - Max: 2.5 W.
Weitere Produktangebote 2SB817C
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| 2SB817C | Hersteller : ONSEMI |
Description: ONSEMI - 2SB817C - 2SB817C, SINGLE BIPOLAR TRANSISTORS tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 17513 Stücke: Lieferzeit 14-21 Tag (e) |
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| 2SB817C | Hersteller : onsemi |
onsemi BIP PNP 12A 140V |
Produkt ist nicht verfügbar |