2SB1205T-E ON Semiconductor
auf Bestellung 967 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
623+ | 0.25 EUR |
626+ | 0.24 EUR |
627+ | 0.23 EUR |
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Technische Details 2SB1205T-E ON Semiconductor
Description: TRANS PNP 20V 5A TP, Packaging: Bulk, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A, Current - Collector Cutoff (Max): 500nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V, Frequency - Transition: 320MHz, Supplier Device Package: TP, Current - Collector (Ic) (Max): 5 A, Voltage - Collector Emitter Breakdown (Max): 20 V, Power - Max: 1 W.
Weitere Produktangebote 2SB1205T-E nach Preis ab 0.24 EUR bis 0.55 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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2SB1205T-E | Hersteller : ON Semiconductor | Trans GP BJT PNP 20V 5A 1000mW 3-Pin(3+Tab) TP T/R |
auf Bestellung 967 Stücke: Lieferzeit 14-21 Tag (e) |
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2SB1205T-E | Hersteller : onsemi |
Description: TRANS PNP 20V 5A TP Packaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V Frequency - Transition: 320MHz Supplier Device Package: TP Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 1 W |
auf Bestellung 127000 Stücke: Lieferzeit 10-14 Tag (e) |
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2SB1205T-E | Hersteller : ON Semiconductor | Trans GP BJT PNP 20V 5A 1000mW 3-Pin(3+Tab) TP T/R |
auf Bestellung 463 Stücke: Lieferzeit 14-21 Tag (e) |
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2SB1205T-E | Hersteller : ON Semiconductor | Bipolar Transistors - BJT BIP PNP 5A 20V |
auf Bestellung 1938 Stücke: Lieferzeit 10-14 Tag (e) |
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2SB1205T-E | Hersteller : ON Semiconductor | Trans GP BJT PNP 20V 5A 1000mW 3-Pin(3+Tab) TP T/R |
auf Bestellung 463 Stücke: Lieferzeit 14-21 Tag (e) |
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2SB1205T-E | Hersteller : ONSEMI |
Description: ONSEMI - 2SB1205T-E - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: NO euEccn: NLR hazardous: false rohsPhthalatesCompliant: NO usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 127000 Stücke: Lieferzeit 14-21 Tag (e) |
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2SB1205T-E | Hersteller : onsemi |
Description: TRANS PNP 20V 5A TP Packaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V Frequency - Transition: 320MHz Supplier Device Package: TP Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 1 W |
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