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2SB1165S onsemi
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Description: POWER BIPOLAR TRANSISTOR, PNP
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 150mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: TO-126LP
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.2 W
auf Bestellung 13086 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
952+ | 0.53 EUR |
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Technische Details 2SB1165S onsemi
Description: POWER BIPOLAR TRANSISTOR, PNP, Packaging: Bulk, Package / Case: TO-225AA, TO-126-3, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 550mV @ 150mA, 3A, Current - Collector Cutoff (Max): 1µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 2V, Frequency - Transition: 130MHz, Supplier Device Package: TO-126LP, Current - Collector (Ic) (Max): 5 A, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 1.2 W.
Weitere Produktangebote 2SB1165S
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
2SB1165S | Hersteller : ONSEMI |
![]() tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 13086 Stücke: Lieferzeit 14-21 Tag (e) |