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2SA2007E

2SA2007E Rohm Semiconductor

2SA2007.pdf Hersteller: Rohm Semiconductor
Description: TRANS PNP 60V 12A TO220FN
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 320 @ 2A, 2V
Frequency - Transition: 80MHz
Supplier Device Package: TO-220FN
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 25 W
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Lieferzeit 10-14 Tag (e)
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100+ 3.34 EUR
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Technische Details 2SA2007E Rohm Semiconductor

Description: TRANS PNP 60V 12A TO220FN, Packaging: Bulk, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 400mA, 8A, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 320 @ 2A, 2V, Frequency - Transition: 80MHz, Supplier Device Package: TO-220FN, Part Status: Not For New Designs, Current - Collector (Ic) (Max): 12 A, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 25 W.

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2SA2007E 2SA2007E Hersteller : ROHM Semiconductor rohm_2SA2007.pdf Bipolar Transistors - BJT Trans GP BJT PNP 60V 12A
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