2SA1587-BL,LF Toshiba
auf Bestellung 4400 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3907+ | 0.04 EUR |
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Technische Details 2SA1587-BL,LF Toshiba
Description: TRANS PNP 120V 0.1A SC70, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 125°C (TJ), Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V, Frequency - Transition: 100MHz, Supplier Device Package: SC-70, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 120 V, Power - Max: 100 mW.
Weitere Produktangebote 2SA1587-BL,LF nach Preis ab 0.031 EUR bis 0.43 EUR
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2SA1587-BL,LF | Hersteller : Toshiba |
 Trans GP BJT PNP 120V 0.1A 100mW Automotive AEC-Q101 3-Pin USM T/R |
auf Bestellung 4400 Stücke: Lieferzeit 14-21 Tag (e) |
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2SA1587-BL,LF | Hersteller : Toshiba Semiconductor and Storage |
Description: TRANS PNP 120V 0.1A SC70 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V Frequency - Transition: 100MHz Supplier Device Package: SC-70 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 120 V Power - Max: 100 mW |
auf Bestellung 4825 Stücke: Lieferzeit 10-14 Tag (e) |
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2SA1587-BL,LF | Hersteller : Toshiba |
Bipolar Transistors - BJT Bias Resistor Built-in transistor |
auf Bestellung 5824 Stücke: Lieferzeit 10-14 Tag (e) |
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2SA1587-BL,LF | Hersteller : Toshiba |
Trans GP BJT PNP 120V 0.1A 100mW Automotive AEC-Q101 3-Pin USM T/R |
Produkt ist nicht verfügbar |
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2SA1587-BL,LF | Hersteller : Toshiba Semiconductor and Storage |
Description: TRANS PNP 120V 0.1A SC70 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V Frequency - Transition: 100MHz Supplier Device Package: SC-70 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 120 V Power - Max: 100 mW |
Produkt ist nicht verfügbar |