![2SA1450T-AA 2SA1450T-AA](https://mm.digikey.com/Volume0/opasdata/d220001/medias/images/4363/MFG_J113RL1.jpg)
2SA1450T-AA onsemi
![SNYOS14257-1.pdf?t.download=true&u=5oefqw](/images/adobe-acrobat.png)
Description: PNP SILICON TRANSISTOR
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 40mA, 400mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 50mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: 3-NP
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 600 mW
auf Bestellung 31073 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3806+ | 0.13 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details 2SA1450T-AA onsemi
Description: PNP SILICON TRANSISTOR, Packaging: Bulk, Package / Case: TO-226-3, TO-92-3 (TO-226AA), Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 40mA, 400mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 50mA, 5V, Frequency - Transition: 120MHz, Supplier Device Package: 3-NP, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 80 V, Power - Max: 600 mW.
Weitere Produktangebote 2SA1450T-AA
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
2SA1450T-AA | Hersteller : ONSEMI |
![]() tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 31073 Stücke: Lieferzeit 14-21 Tag (e) |