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2N7002P,235

2N7002P,235 Nexperia


2n7002p.pdf Hersteller: Nexperia
Trans MOSFET N-CH 60V 0.36A Automotive AEC-Q101 3-Pin SOT-23 T/R
auf Bestellung 50000 Stücke:

Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
10000+0.03 EUR
20000+ 0.029 EUR
50000+ 0.026 EUR
Mindestbestellmenge: 10000
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Technische Details 2N7002P,235 Nexperia

Description: MOSFET N-CH 60V 360MA TO236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 360mA (Ta), Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V, Power Dissipation (Max): 350mW (Ta), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: TO-236AB, Grade: Automotive, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 4.5, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 10, Qualification: AEC-Q101.

Weitere Produktangebote 2N7002P,235 nach Preis ab 0.028 EUR bis 0.39 EUR

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2N7002P,235 2N7002P,235 Hersteller : Nexperia 2n7002p.pdf Trans MOSFET N-CH 60V 0.36A Automotive AEC-Q101 3-Pin SOT-23 T/R
auf Bestellung 50000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
10000+0.034 EUR
20000+ 0.032 EUR
50000+ 0.028 EUR
Mindestbestellmenge: 10000
2N7002P,235 2N7002P,235 Hersteller : Nexperia 2n7002p.pdf Trans MOSFET N-CH 60V 0.36A Automotive AEC-Q101 3-Pin SOT-23 T/R
auf Bestellung 50000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
10000+0.034 EUR
20000+ 0.032 EUR
50000+ 0.028 EUR
Mindestbestellmenge: 10000
2N7002P,235 2N7002P,235 Hersteller : Nexperia USA Inc. 2N7002P.pdf Description: MOSFET N-CH 60V 360MA TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 4.5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 10
Qualification: AEC-Q101
auf Bestellung 1160000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10000+0.038 EUR
Mindestbestellmenge: 10000
2N7002P,235 2N7002P,235 Hersteller : Nexperia 2n7002p.pdf Trans MOSFET N-CH 60V 0.36A Automotive AEC-Q101 3-Pin SOT-23 T/R
auf Bestellung 30000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
10000+0.05 EUR
Mindestbestellmenge: 10000
2N7002P,235 2N7002P,235 Hersteller : Nexperia 2n7002p.pdf Trans MOSFET N-CH 60V 0.36A Automotive AEC-Q101 3-Pin SOT-23 T/R
auf Bestellung 40000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
10000+0.051 EUR
Mindestbestellmenge: 10000
2N7002P,235 2N7002P,235 Hersteller : Nexperia 2n7002p.pdf Trans MOSFET N-CH 60V 0.36A Automotive AEC-Q101 3-Pin SOT-23 T/R
auf Bestellung 50000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
10000+0.053 EUR
Mindestbestellmenge: 10000
2N7002P,235 2N7002P,235 Hersteller : Nexperia 2N7002P-1371189.pdf MOSFETs 2N7002P/SOT23/TO-236AB
auf Bestellung 301123 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
9+0.33 EUR
13+ 0.23 EUR
100+ 0.11 EUR
1000+ 0.067 EUR
2500+ 0.058 EUR
10000+ 0.037 EUR
Mindestbestellmenge: 9
2N7002P,235 2N7002P,235 Hersteller : Nexperia USA Inc. 2N7002P.pdf Description: MOSFET N-CH 60V 360MA TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 4.5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 10
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1183225 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
46+0.39 EUR
66+ 0.27 EUR
136+ 0.13 EUR
500+ 0.11 EUR
1000+ 0.075 EUR
2000+ 0.065 EUR
5000+ 0.061 EUR
Mindestbestellmenge: 46
2N7002P,235 2N7002P,235 Hersteller : Nexperia 2n7002p.pdf Trans MOSFET N-CH 60V 0.36A Automotive AEC-Q101 3-Pin SOT-23 T/R
auf Bestellung 2157 Stücke:
Lieferzeit 14-21 Tag (e)
2N7002P,235 2N7002P,235 Hersteller : Nexperia 2n7002p.pdf Trans MOSFET N-CH 60V 0.36A Automotive AEC-Q101 3-Pin SOT-23 T/R
auf Bestellung 2157 Stücke:
Lieferzeit 14-21 Tag (e)
2N7002P,235 2N7002P,235 Hersteller : NEXPERIA 2n7002p.pdf Trans MOSFET N-CH 60V 0.36A Automotive 3-Pin SOT-23 T/R
auf Bestellung 50000 Stücke:
Lieferzeit 14-21 Tag (e)
2N7002P,235 2N7002P,235 Hersteller : NEXPERIA 2N7002P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 0.28A; Idm: 1.2A; 420mW
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.28A
Pulsed drain current: 1.2A
Power dissipation: 0.42W
Case: SOT23; TO236AB
Gate-source voltage: ±20V
On-state resistance:
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
2N7002P,235 2N7002P,235 Hersteller : NEXPERIA 2N7002P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 0.28A; Idm: 1.2A; 420mW
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.28A
Pulsed drain current: 1.2A
Power dissipation: 0.42W
Case: SOT23; TO236AB
Gate-source voltage: ±20V
On-state resistance:
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar