2N7002KDW_R1_00001 Panjit International Inc.
Hersteller: Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 115mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 35pF @ 25V
Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.069 EUR |
| 6000+ | 0.062 EUR |
| 9000+ | 0.058 EUR |
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Technische Details 2N7002KDW_R1_00001 Panjit International Inc.
Description: 60V N-CHANNEL ENHANCEMENT MODE M, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 200mW (Ta), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 115mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 35pF @ 25V, Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V, Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: SOT-363, Part Status: Active.
Weitere Produktangebote 2N7002KDW_R1_00001 nach Preis ab 0.047 EUR bis 0.39 EUR
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2N7002KDW_R1_00001 | Hersteller : Panjit International Inc. |
Description: 60V N-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 200mW (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 115mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 35pF @ 25V Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-363 Part Status: Active |
auf Bestellung 15751 Stücke: Lieferzeit 10-14 Tag (e) |
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2N7002KDW_R1_00001 | Hersteller : Panjit |
MOSFETs 60V N-Channel Enhancement Mode MOSFET - ESD Protected |
auf Bestellung 26348 Stücke: Lieferzeit 10-14 Tag (e) |
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| 2N7002KDW_R1_00001 | Hersteller : PanJit |
Trans MOSFET N-CH 60V 0.115A 6-Pin SOT-363 T/R |
auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002KDW_R1_00001 | Hersteller : PanJit Semiconductor |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 115mA; Idm: 800mA; 120mW Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.115A Pulsed drain current: 0.8A Power dissipation: 0.12W Case: SOT363 Gate-source voltage: ±20V On-state resistance: 4Ω Mounting: SMD Gate charge: 0.8nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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2N7002KDW-R1-00001 | Hersteller : Panjit |
MOSFET SOT-363/MOS/SOT/NFET-035TS |
Produkt ist nicht verfügbar |
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2N7002KDW_R1_00001 | Hersteller : PanJit Semiconductor |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 115mA; Idm: 800mA; 120mW Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.115A Pulsed drain current: 0.8A Power dissipation: 0.12W Case: SOT363 Gate-source voltage: ±20V On-state resistance: 4Ω Mounting: SMD Gate charge: 0.8nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |