Technische Details 2N6782 Semelab
Description: MOSFET N-CH 100V 3.5A TO39, Packaging: Bulk, Package / Case: TO-205AF Metal Can, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc), Rds On (Max) @ Id, Vgs: 600mOhm @ 2.25A, 10V, Power Dissipation (Max): 800mW (Ta), 15W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-39, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 10 V.
Weitere Produktangebote 2N6782
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2N6782 | Hersteller : MICROSEMI |
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2N6782 | Hersteller : Microsemi Corporation |
![]() Packaging: Bulk Package / Case: TO-205AF Metal Can Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 2.25A, 10V Power Dissipation (Max): 800mW (Ta), 15W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-39 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 10 V |
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2N6782 | Hersteller : Microchip Technology |
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Produkt ist nicht verfügbar |
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2N6782 | Hersteller : onsemi / Fairchild |
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2N6782 | Hersteller : Infineon / IR |
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Produkt ist nicht verfügbar |