2N5551 TIN/LEAD Central Semiconductor
auf Bestellung 1358 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 1.16 EUR |
| 10+ | 0.95 EUR |
| 100+ | 0.74 EUR |
| 500+ | 0.65 EUR |
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Technische Details 2N5551 TIN/LEAD Central Semiconductor
Description: TRANS NPN 160V 0.6A TO92-3, Packaging: Bulk, Package / Case: TO-226-3, TO-92-3 (TO-226AA), Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA, Current - Collector Cutoff (Max): 50nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Frequency - Transition: 300MHz, Supplier Device Package: TO-92-3, Part Status: Active, Current - Collector (Ic) (Max): 600 mA, Voltage - Collector Emitter Breakdown (Max): 160 V, Power - Max: 625 mW.
Weitere Produktangebote 2N5551 TIN/LEAD nach Preis ab 0.62 EUR bis 1.16 EUR
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2N5551 TIN/LEAD | Hersteller : Central Semiconductor Corp |
 Description: TRANS NPN 160V 0.6A TO92-3Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 300MHz Supplier Device Package: TO-92-3 Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 160 V Power - Max: 625 mW |
auf Bestellung 2185 Stücke: Lieferzeit 10-14 Tag (e) |
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