2N5550TFR onsemi
Hersteller: onsemiDescription: TRANS NPN 140V 0.6A TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 625 mW
auf Bestellung 118000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2000+ | 0.069 EUR |
| 6000+ | 0.064 EUR |
| 10000+ | 0.055 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details 2N5550TFR onsemi
Description: TRANS NPN 140V 0.6A TO92-3, Packaging: Tape & Reel (TR), Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V, Frequency - Transition: 300MHz, Supplier Device Package: TO-92-3, Part Status: Active, Current - Collector (Ic) (Max): 600 mA, Voltage - Collector Emitter Breakdown (Max): 140 V, Power - Max: 625 mW.
Weitere Produktangebote 2N5550TFR nach Preis ab 0.042 EUR bis 0.6 EUR
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2N5550TFR | Hersteller : ON Semiconductor |
Trans GP BJT NPN 140V 0.6A 3-Pin TO-92 T/R |
auf Bestellung 9990 Stücke: Lieferzeit 14-21 Tag (e) |
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2N5550TFR | Hersteller : ON Semiconductor |
Trans GP BJT NPN 140V 0.6A 3-Pin TO-92 T/R |
auf Bestellung 9990 Stücke: Lieferzeit 14-21 Tag (e) |
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2N5550TFR | Hersteller : onsemi / Fairchild |
Bipolar Transistors - BJT NPN Si Transistor Epitaxial |
auf Bestellung 9346 Stücke: Lieferzeit 10-14 Tag (e) |
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2N5550TFR | Hersteller : onsemi |
Description: TRANS NPN 140V 0.6A TO92-3 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V Frequency - Transition: 300MHz Supplier Device Package: TO-92-3 Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 140 V Power - Max: 625 mW |
auf Bestellung 120857 Stücke: Lieferzeit 10-14 Tag (e) |
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2N5550TFR | Hersteller : ON Semiconductor |
Trans GP BJT NPN 140V 0.6A 3-Pin TO-92 T/R |
Produkt ist nicht verfügbar |
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2N5550TFR | Hersteller : ON Semiconductor |
Trans GP BJT NPN 140V 0.6A 3-Pin TO-92 T/R |
Produkt ist nicht verfügbar |
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2N5550TFR | Hersteller : ON Semiconductor |
Trans GP BJT NPN 140V 0.6A 3-Pin TO-92 T/R |
Produkt ist nicht verfügbar |
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2N5550TFR | Hersteller : ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 140V; 0.6A; 0.625W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 140V Collector current: 0.6A Power dissipation: 0.625W Case: TO92 Current gain: 20...250 Mounting: THT Kind of package: reel; tape Frequency: 100...300MHz Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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2N5550TFR | Hersteller : ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 140V; 0.6A; 0.625W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 140V Collector current: 0.6A Power dissipation: 0.625W Case: TO92 Current gain: 20...250 Mounting: THT Kind of package: reel; tape Frequency: 100...300MHz |
Produkt ist nicht verfügbar |