Produkte > CENTRAL SEMICONDUCTOR > 2N3715 PBFREE
2N3715 PBFREE

2N3715 PBFREE Central Semiconductor

2N3713-3716.PDF Hersteller: Central Semiconductor
Bipolar Transistors - BJT NPN GP Power
auf Bestellung 56 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+11 EUR
10+ 9.96 EUR
20+ 9.49 EUR
100+ 8.24 EUR
500+ 7.16 EUR
1000+ 6.32 EUR
2500+ 6.11 EUR
Produktrezensionen
Produktbewertung abgeben

Technische Details 2N3715 PBFREE Central Semiconductor

Description: TRANS NPN 60V 10A TO-3, Packaging: Tube, Package / Case: TO-204AA, TO-3, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 800mV @ 500mA, 5A, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 2V, Frequency - Transition: 4MHz, Supplier Device Package: TO-3, Part Status: Last Time Buy, Current - Collector (Ic) (Max): 10 A, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 150 W.

Weitere Produktangebote 2N3715 PBFREE

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
2N3715 PBFREE 2N3715 PBFREE Hersteller : Central Semiconductor Corp 2N3713-3716.PDF Description: TRANS NPN 60V 10A TO-3
Packaging: Tube
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 500mA, 5A
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 2V
Frequency - Transition: 4MHz
Supplier Device Package: TO-3
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 150 W
Produkt ist nicht verfügbar