2N3637L

2N3637L Microchip Technology


8968-lds-0156-datasheet Hersteller: Microchip Technology
Description: TRANS PNP 175V 1A TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Supplier Device Package: TO-5AA
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 175 V
Power - Max: 1 W
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Technische Details 2N3637L Microchip Technology

Description: TRANS PNP 175V 1A TO5, Packaging: Bulk, Package / Case: TO-205AA, TO-5-3 Metal Can, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA, Current - Collector Cutoff (Max): 10µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V, Supplier Device Package: TO-5AA, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 175 V, Power - Max: 1 W.

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2N3637L 2N3637L Hersteller : Microchip Technology 2N3634_2N3637UB_LDS_0156_MIL_PRF_19500_357-3500071.pdf Bipolar Transistors - BJT 175 V Small-Signal BJT
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