2N3585P Microchip Technology
Hersteller: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 125mA, 1A
Current - Collector Cutoff (Max): 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 10V
Supplier Device Package: TO-66 (TO-213AA)
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 2.5 W
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 125mA, 1A
Current - Collector Cutoff (Max): 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 10V
Supplier Device Package: TO-66 (TO-213AA)
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 2.5 W
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details 2N3585P Microchip Technology
Description: POWER BJT, Packaging: Bulk, Package / Case: TO-213AA, TO-66-2, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 750mV @ 125mA, 1A, Current - Collector Cutoff (Max): 5mA, DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 10V, Supplier Device Package: TO-66 (TO-213AA), Current - Collector (Ic) (Max): 2 A, Voltage - Collector Emitter Breakdown (Max): 300 V, Power - Max: 2.5 W.
Weitere Produktangebote 2N3585P
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
2N3585P | Hersteller : Microchip Technology | Bipolar Transistors - BJT Power BJT |
Produkt ist nicht verfügbar |