2N2221AUB Microchip Technology


lds_0022_2N3439_40-1593857.pdf Hersteller: Microchip Technology
Bipolar Transistors - BJT 40 V Small-Signal BJT
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Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+13.27 EUR
25+ 13.25 EUR
100+ 12.3 EUR
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Technische Details 2N2221AUB Microchip Technology

Description: TRANS NPN 50V 0.8A 3SMD, Packaging: Bulk, Package / Case: 3-SMD, Flat Leads, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA, Current - Collector Cutoff (Max): 50nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V, Supplier Device Package: 3-SMD, Part Status: Active, Current - Collector (Ic) (Max): 800 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 500 mW.

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2N2221AUB 2N2221AUB Hersteller : Microchip Technology lds-0060.pdf Trans GP BJT NPN 50V 0.8A 500mW 4-Pin Case UB Waffle
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2N2221AUB Hersteller : Microsemi Corporation 2N2221A%2C%202N2222A.pdf Description: TRANS NPN 50V 0.8A 3SMD
Packaging: Bulk
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: 3-SMD
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Produkt ist nicht verfügbar